This research examines and analyses the solar cell performance of methylammonium lead triiodide (MAPbI3) perovskite solar cells (PSC) that utilize Polyaniline (PANI)-doped-graphene oxide (GO) as HTL. Additionally, the study used the SCAPS-1D simulation software to model and analyze the experimental data. The simulated data generated by the SCAPS-1D software is afterward compared to the experimental findings. This comparison serves as a foundation for further optimization of the solar cell's performance. This study explicitly examined the impact of layer thickness and doping density on device performance in order to determine which parameters should be optimized to enhance overall performance. The SCAPS-1D simulation obtained a highest power conversion efficiency (PCE) of 15.37%. This work presented an improved efficiency of 40% from the experimental data. The findings of our study have the potential to be used in the prediction of key parameters for the optimization of perovskite solar cells (PSCs) using doped PANI/GO as a hole transport layer (HTL).

This paper reports an ultrahigh-sensitive ISFET sensor that is developed using TCAD model of the industrial 22-nm ultrathin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) transistors. The modeling method is exploited by changing the potential surface charge depending on the electrolyte pH change and investigating how will it cause the threshold voltage shift of ISFET device and other transfer characteristic parameters. The properties of a user-defined material offered by Silvaco are exploited to simulate the electrolyte behavior. The parameters of silicon semiconductor material (i.e., energy bandgap, permittivity, affinity, and density of states) are set to reconstruct an electrolyte solution. The electrostatic solution of the electrolyte area is investigated by giving a numerical solution for the semiconductor equation inside this area. On the other hand, the strong electrostatic coupling between the front gate and the back gate of FDSOI devices provide an intrinsic signal amplification feature for sensing applications. Utilizing a layer deposited Titanium dioxide (TiO2) as a pH sensing film, pH sensors having a sensitivity ∼1250 mV/pH is reported. The small sensing area and the FDSOI-based technology of the device make the sensors ideal for the IoT market.

In recent years, breakthroughs in electronics technology have resulted in upgrades in the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted as one of the worthy contenders due to its superior material characteristics. A 14 nm horizontal double-gate bilayer graphene FET with a high-k/metal gate is proposed, which is composed of hafnium dioxide (HfO₂) and tungsten silicide (WSi_x) respectively. It is simulated and modelled using silvaco ATHENA and ATLAS technology computer-aided design (TCAD) tools, as well as the Taguchi L9 orthogonal array (OA). The threshold voltage (V_TH) adjustment implant dose, V_TH adjustment implant energy, source/drain (S/D) implant dose, and S/D implant energy have all been investigated as process parameters. While the V_TH adjustment tilt angle and the S/D implant tilt angle have both been investigated as noise factors. When compared to the initial findings before optimization, the I_OFF has a value of 29.579 nA/µm, indicating a significant improvement. Findings from the optimization technique demonstrate excellent device performance with an I_OFF of 28.564 nA/µm, which is closer to the international technology roadmap semiconductor (ITRS) 2013 target than before.

In this work, the Taguchi Method approach is used to optimize graphene oxide (GO) as the hole transport layer (HTL) in inverted perovskite solar cells (IPSC). By using this method, the data from the numerical modelling Solar Cell Capacitance Simulator-One Dimensional (SCAPS-1D) was optimized. While it has distinct parameter results and diverse causes, it also takes a long time to complete the analysis process. The Taguchi method is reported to be able to find the most significant factor and reduce the parameter variations in less time. The Taguchi algorithm is used in this experiment because it is based on orthogonal array (OA) experiments, which provide a substantially smaller variance for the experiment with optimal control parameter values. SCAPS-1D software was used to simulate the IPSC with GO as HTL. The results obtained with the software are then analysed and compared with the performance of the solar cell. The final results show that the Taguchi Method optimized IPSC with GO as HTL achieved better Power Conversion Efficiency (PCE) compared to previous researchers, with the efficiency increasing from 18.53%.to 23.408%.

Study of ISFET sensitivity to pH variations using Silvaco TCAD

In this study, we developed a fiber optic sensor based on a lateral offset displacement to evaluate the water quality of a hydroponic farming system. The fiber is set up in lateral offset SM-SM fiber mode. The fiber core has been spliced at a variety offset lengths, which serve as a sensing region of the fiber sensor towards the hydroponic crop system's water quality, including pH and temperature. Upon completion, the highest sensitivity was achieved by fiber optic sensor with an offset distance of 18.72 µm, with 0.1972 dBm/pH and 0.2863 dBm/°C for pH and temperature measurements, respectivel