Silver–tantalum (Ag–Ta) thin films were fabricated by magnetron co-sputtering on silicon (Si) wafer (100) and glass slide substrates at room temperature. The Ag–Ta thin films were prepared at various deposition times of 5, 10, 20 and 30 s and the physical, structural and optical properties of the Ag–Ta thin films were investigated. It was determined that the thicknesses of the films were 7, 9, 17 and 33 nm, respectively. The results revealed that an increase in the film thickness leads to a monotonic increase in FCC and BCC phase of Ag and Ta, respectively. The work function and stoichiometric of the Ag–Ta thin films were investigated by ultraviolet and X-ray photoemission spectroscopies (UPS and XPS), respectively. The potential of Ag–Ta thin films to be used as low-emission coating was investigated using a spectrophotometer. A UV–VIS–NIR spectrophotometer was used to measure the spectral reflectance in the wavelength range from 300 to 2000 nm. The results showed that the Ag–Ta thin film deposited for 30 s exhibited higher reflectance in NIR region than those of 5, 10, 20 and 30 s. It demonstrated an average reflectance of about 80% and slightly decreased to 75% after being kept in the air atmosphere for 28 days. It can be likewise proposed as an alternative thin film with high reflectance of NIR radiation single layer to develop industrial low-emission coating for cost-effective, clean, and easy adaptation to a large area coating.

High deposition rate titanium hafnium nitride (TiHfN) ultra-thin film deposition was successfully prepared by closed-field dual-cathode DC unbalanced reactive magnetron sputtering. All prepared films were polycrystalline. The morphology and atomic composition of the TiHfN ultra-thin film were characterized by field-emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The columnar structure could be promoted by increasing the deposition time. Lastly, the surface-enhanced Raman scattering (SERS) activity was investigated by Rhodamine 6G (R6G) drop-dried TiHfN ultra-thin film surface. The TiHfN ultra-thin films deposited at 20 s were found to have a high SERS activity, whose detection of R6G molecule at 10-5 M. The result could open preliminary studies on ternary transition metal nitride (TTMN) thin films for the alternative plasmonic sensors as SERS chips.