Molecular dynamics simulations of nanoindentation were conducted to compare the dislocation behavior in a pure V and a TiVTa multi-principal element alloy (MPEA) with [100] and [111] crystal orientations. It is found that the significant resistance to dislocation motion and loop formation in the TiVTa MPEA compared to pure V, attributed to its substantial lattice distortion. While dislocation nucleation was heterogeneous in both materials with similar activation volumes and nucleation stresses (approximately 0.2 G), the dislocation density and plastic zone volume in TiVTa were substantially lower. Under standard indentation conditions, independent dislocation loops readily formed in pure V but were absent in TiVTa. With a larger indenter size and a greater nanoindentation depth, the results demonstrated that forming loops in TiVTa requires significantly higher force, directly linking this effect to the hindrance of dislocation glide by chemical disorder and lattice distortion. This study provides atomic-scale insights into the deformation mechanisms of TiVTa MPEAs, offering guidelines for future alloy design.