This paper presents a finite element simulation of thermal damage to a CCD caused by nanosecond multi-pulse laser exposure. The temperature changes in the CCD due to the laser pulses were simulated, and the time evolution of thermal damage was studied. The impacts of different laser parameters such as spot radius, pulse width, and repetition frequency on thermal damage were evaluated. The results indicated that the temperature of the CCD increased with each pulse due to cumulative effects, leading to thermal damage. A smaller laser spot size intensified the temperature rise, accelerating the rate at which different layers in the CCD exceeded the relative melting point of each material. In the case of nanosecond pulse width, variations in pulse width had minimal effects on CCD thermal damage when repetition frequency and average power density were constant. Lower repetition frequencies made it easier to cause melting damage to the CCD when pulse width and average power density were constant.

Reliable power generation from solar cells is critical for spacecraft operation. High-energy laser irradiation poses a significant threat, as it can potentially cause irreversible damage to solar cells, which is difficult to detect remotely using conventional techniques such as radar or optical imaging. Spectral detection offers a potential approach through unique “spectral fingerprints,” but the spectral characteristics of laser-damaged solar cells remain insufficiently documented. This study investigates the scattering spectral characteristics of triple-junction GaAs (Gallium Arsenide) solar cells subjected to nanosecond pulsed laser irradiation to establish spectral signatures for damage assessment. GaAs solar cells were irradiated at varying energy densities. Bidirectional Reflectance Distribution Function (BRDF) spectra (400–1200 nm) were measured. A thin-film interference model was used to simulate damage effects by varying layer thicknesses, thereby interpreting experimental results. The results demonstrate that as the laser energy density increases from 0.12 to 2.96 J/cm², the number of absorption peaks in the visible range (400–750 nm) decreases from three to zero, and the oscillation in the near-infrared range vanishes completely, indicating progressive damage to the GaInP (Gallium Indium Phosphide) and GaAs layers. This study provides a spectral-based approach for remote assessment of laser-induced damage to solar cells, which is crucial for satellite health monitoring.

The damage characteristics of monocrystalline silicon solar cells irradiated by a nanosecond pulsed laser were investigated in a vacuum environment. An 8 ns pulsed laser was used with a 1064 nm wavelength, a 2.0 J maximum pulse energy, and a millimeter-scale ablation spot diameter. The cells were irradiated by a laser with varying fluences, irradiation positions, and pulse numbers. The damage mechanism was discussed in combination with the degradation of electrical properties, the morphology of surface damage, and electroluminescence images. A single pulse mainly caused surface heating and deformation, while multi-pulse irradiation led to the formation of melting ablation craters. More severe performance degradation was caused by irradiation at the grid line site due to fracture of the grid line electrodes. Moreover, monocrystalline silicon cells showed excellent damage resistance to fixed-position irradiations at non-gridded line areas. This work reveals, for the first time in vacuum, that grid-line fracture dominates performance degradation—enabling targeted hardening for space solar cells.