Dzyaloshinskii–Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS₂ by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman–Kittel–Kasuya–Yosida mechanism. The resultant giant topological Hall resistivity $${\rho }_{{xy}}^{T}$$ρ x y T of $$1.41{\mathrm{\mu}} \Omega \cdot {{\mathrm{cm}}}$$1.41 μ Ω ⋅ cm at $${V}_{g}=-5.2{\mathrm{V}}$$V g = − 5.2 V (about $$424 \%$$424 % larger than the zero-bias value) is larger than most known chiral magnets. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin–orbit interaction. Dual-intercalation in 2H-TaS₂ provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.

Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet ${\mathrm{Cr}}_{1.2}{\mathrm{Te}}_2$ observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to $3.8\times {10}^{21}{\mathrm{cm}}^{-3}$. We observed nonmonotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the ${\mathrm{Cr}}_{1.2}{\mathrm{Te}}_2$. The tunability of the magnetic properties and phase in room temperature magnetic vdW ${\mathrm{Cr}}_{1.2}{\mathrm{Te}}_2$ is a significant step towards practical spintronic devices.

Two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a frontier in condensed matter physics and materials science, offering unprecedented opportunities for next-generation spintronic technologies. This review examines the synthesis, properties, and transport phenomena of 2D magnetic materials, with particular emphasis on their integration into spintronic devices. A comprehensive historical overview of magnetic materials is provided, tracing the evolution of intrinsic ferromagnetism in the 2D limit, highlighting key materials such as Cr₂Ge₂Te₆, Fe₃GeTe₂, and CrI₃. Special attention is devoted to the fundamental magnetic properties—including magnetic anisotropy, Curie temperature, and spin polarization—that underpin their functional performance. Major synthesis strategies are evaluated, including chemical vapor deposition, micromechanical exfoliation, and molecular beam epitaxy, focusing on scalability, interface control, and material purity. Furthermore, hallmark transport phenomena are discussed, such as giant magnetoresistance, the quantum anomalous Hall effect, spin–orbit torque, and the role of exchange bias and skyrmions in vdW heterostructures. Throughout the review, current limitations, unresolved questions, and emerging research directions are identified that will accelerate the deployment of 2D magnetic materials in flexible, reconfigurable, and quantum spintronic systems. This work aims to guide ongoing experimental and theoretical efforts and articulate a vision for advancing the field toward device-level implementation.

Layered chiral magnets with broken spatial inversion symmetry (SIS) enable chiral spin textures to occur in atomically thin layers. However, most layered materials retain SIS during their crystallization. Here, we demonstrate that SIS can be broken in a layered transition metal dichalcogenide TaS₂ by intercalating Mn atoms. A chiral magnetic phase in Mn_1/3TaS₂ has, thus, been realized. This phase enables a nonzero Dzyaloshinskii–Moriya interaction, which in turn gives rise to large topological Hall effects (THEs) below 50 K. Both the ferromagnetism and THE can be tuned at low temperatures by modulating the carrier density via a protonic gate. Measured at 20 K with V_g = −4.7 V applied to the gate and electron doping density of 1.7 × 10²² cm⁻³, the maximum THE was almost double that recorded with no gate voltage applied. By further reducing the sample thicknesses, both the Curie temperature T_c and the longitudinal magnetoresistance can be significantly modulated. This is consistent with the theory of critical behavior. Our work highlights the ability to control both magnetism and chiral spin textures in Mn_1/3TaS₂ nanoflakes. Applying this discovery may lead to a variety of practical van der Waals heterostructure devices.

The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the doping-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.