Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals, and recent progress in fabricating its heterostructures is notable as well. In particular, with growing interest in 2D van der Waals heterostructures, 2D perovskites have become a strong candidate as a new building block for heterostructures to reveal unique physical properties across different interfaces. Until now, various heterostructure devices of 2D perovskite single crystals with other types of 2D materials such as transition metal dichalcogenides (TMDs) and graphene have been studied, which have shown intriguing results including interlayer excitons and enhanced electronic properties. Here, we introduce various synthetic approaches to realize 2D perovskite single crystals and unique characteristics of their single crystal heterostructures fabricated with precision, possessing sharp interfaces. Moreover, recent studies of semiconductor devices based on 2D perovskite single crystal heterostructures are discussed in-depth. New perspectives to further the horizon in the field of 2D perovskite heterostructures are suggested in this work including the consideration of metal–2D material van der Waals contact, application of dry transfer techniques, electric bias driven ion diffusion studies, and nanocrystal array fabrication. 2D perovskite heterostructure single crystal devices factoring in these novel perspectives will further uncover the true potential of these materials for highly efficient and stable semiconductor devices.

2D perovskite (PVSK) single crystals have received significant attention due to their unique optical and optoelectronic properties. However, current synthesis methods face limitations, particularly in large‐area fabrication, which remain critical barriers to practical applications. In this study, the synthesis of red/green/purple‐blue‐colored 2D PVSK nanocrystals over a large area (4‐inch wafer) and the fabrication of high‐performance photodetector arrays are presented via a facile yet efficient spray‐coating approach with a liquid‐bridge transport effect. The photodetector array achieves 100% working yield, high photo‐responsivity (1.5 × 10⁶ A W⁻¹) and specific‐detectivity (1.1 × 10¹⁶ Jones) with competitive photomapping characteristics. An intelligent vision system for automatic shape recognition is further demonstrated with a recognition rate exceeding 90%. This study provides significant advances in the scalable synthesis of nanoscale 2D PVSK crystals, their integration into large‐area optoelectronic devices, and their potential use in artificial‐intelligence systems.

Perovskite materials have emerged as promising candidates for next-generation photodetectors (PDs) owing to their superior optoelectronic properties and compatibility with low-cost, low-temperature fabrication processes. Broad applicability of PDs spans diverse fields, including X-ray detection, wearable electronics, autonomous vehicles, artificial intelligence, imaging, optical communication, and biomedical sensing, offering advantages over conventional semiconductor PDs based on Si, Ge, InGaAs, and GaN. The integration of plasmonic nanostructures into perovskite-based devices has recently emerged as an effective strategy to enhance performance by amplifying light absorption near the perovskite layer. This review summarizes recent advances and design strategies for plasmonic-integrated perovskite photodetectors (Pe-PDs), with a particular emphasis on plasmonic nanopatterns and nanoparticles as viable approaches for solution-processable Pe-PDs.

The field of neuromorphic computing has seen significant advancements through the development of artificial synapses, with two-dimensional (2D) and quasi-2D halide perovskites emerging as key materials in this area. These materials exhibit remarkable properties such as resistive switching, fast charge carrier mobility, and low power consumption, making them ideal candidates for emulating synaptic behavior in artificial neural networks. This article reviews the fundamental principles behind artificial synapses and explores the progress made in utilizing 2D and quasi-2D halide perovskites for synaptic emulation. Key phenomena like short-term and long-term potentiation, spike-timing dependent plasticity, and associative learning are replicated in these materials, offering insights into their potential applications in energy-efficient computing systems. Furthermore, the challenges associated with air stability and the ongoing efforts to improve the performance and reliability of perovskite-based synaptic devices are thoroughly examined. The review also highlights the promising future of these materials in applications ranging from visual systems to sensory adaptation and beyond. This article provides a comprehensive overview of the current state of research in perovskite-based artificial synapses and their role in advancing neuromorphic computing.

Scalable fabrication of uniform perovskite films is a critical bottleneck for large-area perovskite light-emitting diodes (PeLEDs), hindered by coffee-ring formation and heterogeneous crystallization upon scaling. Here, we report a multimodal solvent-engineering strategy enabling highly uniform films via ambient blade coating combined with vacuum-assisted solvent evaporation. Incorporating N -methyl-2-pyrrolidone (NMP) and acetonitrile (ACN) into a dimethylformamide (DMF)–based system synergistically modulates evaporation dynamics: It suppresses macroscopic solute segregation through Marangoni flow–induced redistribution, while tuning precursor coordination to regulate nucleation/phase conversion and promote radiatively efficient film formation. Consequently, the ternary formulation yields films with improved uniformity, reduced trap densities, and enhanced radiative efficiency. Near-infrared (NIR) PeLEDs achieve peak external quantum efficiencies of 25.2% (10 mm ² ), 22.1% (60 mm ² ), and 19.0% (224 mm ² ). A functional vein-imaging prototype is also demonstrated using a 224-mm ² device, highlighting the impact for large-area optoelectronic applications.