We demonstrate a facile and effective method, which is low-cost and easy to scale up, to fabricate holey graphene nanosheets (HGNSs) via ultrafast heating during synthesis. Various heating temperatures are used to modify the material properties of HGNSs. First, we use HGNSs as the electrode active materials for electric double-layer capacitors (EDLCs). A synthesis temperature of 900 °C seems to be optimal, i.e., the conductivity and adhesion of HGNSs reach a compromise. The gravimetric capacitance of this HGNS sample (namely HGNS-900) is 56 F·g⁻¹. However, the volumetric capacitance is low, which hinders its practical application. Secondly, we incorporate activated carbon (AC) into HGNS-900 to make a composite EDLC material. The effect of the AC:HGNS-900 ratio on the capacitance, high-rate performance, and cycling stability are systematically investigated. With a proper amount of HGNS-900, both the electrode gravimetric and volumetric capacitances at high rate charging/discharging are clearly higher than those of plain AC electrodes. The AC/HGNS-900 composite is a promising electrode material for nonaqueous EDLC applications.

Diamond, as an exceptional material with many superior properties, requires a single crystal in a reasonably large size for practical industrial applications. However, achieving large-area single-crystal diamond (SCD) growth without the formation of polycrystalline rims remains challenging. Microwave plasma chemical vapor deposition (MPCVD) using a gas mixture of 10% CH₄-H₂ was used for the homoepitaxial growth of (001) SCD. The effect of nitrogen gas addition in the range of 0–2000 ppm on lateral growth was investigated. Deposition with 180 ppm N₂ over a growth duration of 20 h to reach a thickness of 0.95 mm resulted in significantly enhanced lateral growth without the appearance of a polycrystalline diamond (PCD) rim for the grown diamond, and the total top surface area of SCD increased by an area gain of 1.6 relative to the substrate. The corresponding vertical and lateral growth rates were 47.3 µm/h and 52.5 µm/h, respectively. Characterization by Raman spectroscopy and atomic force microscopy (AFM) revealed uniform structural integrity across the whole surface from the laterally grown regions to the center, including the entire expanded area, in terms of surface morphology and crystalline quality. Moreover, measurements of the etch pit densities (EPDs) showed a substantial reduction in the laterally grown regions, approximately an order of magnitude lower than those in the central region. The high quality of the homoepitaxial diamond layer was further verified with (004) X-ray rocking curve analysis, showing a narrow full width at half maximum (FWHM) of 11 arcsec.