The crystal and magnetic structures of single-crystalline hexagonal ${\mathrm{LuFeO}}_3$ films have been studied using x-ray, electron, and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal ${\mathrm{LuFeO}}_3$ films are room-temperature multiferroics.

The rise of two-dimensional (2D) crystalline superconductors has opened a new frontier of investigating unconventional quantum phenomena in low dimensions. However, despite the enormous advances achieved towards understanding the underlying physics, practical device applications like sensors and detectors using 2D superconductors are still lacking. Here, we demonstrate nonreciprocal antenna devices based on atomically thin NbSe₂. Reversible nonreciprocal charge transport is unveiled in 2D NbSe₂ through multi-reversal antisymmetric second harmonic magnetoresistance isotherms. Based on this nonreciprocity, our NbSe₂ antenna devices exhibit a reversible nonreciprocal sensitivity to externally alternating current (AC) electromagnetic waves, which is attributed to the vortex flow in asymmetric pinning potentials driven by the AC driving force. More importantly, a successful control of the nonreciprocal sensitivity of the antenna devices has been achieved by applying electromagnetic waves with different frequencies and amplitudes. The device’s response increases with increasing electromagnetic wave amplitude and exhibits prominent broadband sensing from 5 to 900 MHz.

For strongly correlated oxides, it has been a long-standing issue regarding the role of the chemical ordering of the dopants on the physical properties. Here, using unit cell by unit cell superlattice growth technique, we determine the role of chemical ordering of the Pr dopant in a colossal magnetoresistant (La_1−yPr_y)_1−xCa_xMnO₃ (LPCMO) system, which has been well known for its large length-scale electronic phase separation phenomena. Our experimental results show that the chemical ordering of Pr leads to marked reduction of the length scale of electronic phase separations. Moreover, compared with the conventional Pr-disordered LPCMO system, the Pr-ordered LPCMO system has a metal–insulator transition that is ∼100 K higher because the ferromagnetic metallic phase is more dominant at all temperatures below the Curie temperature.

Significance: We report a breakthrough in addressing a long-standing and challenging issue: the physical origin of electronic phase separation phenomena in complex oxides. Using tricolor monoatomic superlattice growth, we provide direct experimental evidence to show that the chemical-dopants-induced disorder is crucial for electronic phase separation and colossal magnetoresistance effect. Conceptually our results are far reaching: we believe that correlated materials in general likely need deviations from ideality to display the crucial nonlinear effects important for devices.

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

Artificial spin ice (ASI) consisting patterned array of nano-magnets with frustrated dipolar interactions offers an excellent platform to study frustrated physics using direct imaging methods. Moreover, ASI often hosts a large number of nearly degenerated and non-volatile spin states that can be used for multi-bit data storage and neuromorphic computing. The realization of the device potential of ASI, however, critically relies on the capability of transport characterization of ASI, which has not been demonstrated so far. Using a tri-axial ASI system as the model system, we demonstrate that transport measurements can be used to distinguish the different spin states of the ASI system. Specifically, by fabricating a tri-layer structure consisting a permalloy base layer, a Cu spacer layer and the tri-axial ASI layer, we clearly resolve different spin states in the tri-axial ASI system using lateral transport measurements. We have further demonstrated that the tri-axial ASI system has all necessary required properties for reservoir computing, including rich spin configurations to store input signals, nonlinear response to input signals, and fading memory effect. The successful transport characterization of ASI opens up the prospect for novel device applications of ASI in multi-bit data storage and neuromorphic computing.