The authors review the physics of ultrafast dynamics in semiconductors and their heterostructures, including both the observed experimental phenomena and the theoretical description of the processes. These are probed by ultrafast optical excitation, generating nonequilibrium states that can be monitored by time-resolved spectroscopy. Light pulses create coherent superpositions of states, and the dynamics of the associated phase relationships can be directly investigated by means of many-pulse experiments. The commonly used experimental techniques are briefly reviewed. A variety of different phenomena can be described within a common theoretical framework based on the density-matrix formalism. The important interactions of the carriers included in the theoretical description are the phonon interactions, the interactions with classical and quantum light fields, and the Coulomb interaction among the carriers themselves. These interactions give rise to a strong interplay between phase coherence and relaxation, which strongly affects the nonequilibrium dynamics. Based on the general theory, the authors review the physical phenomena in various semiconductor structures including superlattices, quantum wells, quantum wires, and bulk media. Particular results which have played a central role in understanding the microscopic origins of the relaxation processes are discussed in detail.

An all optical implementation of quantum information processing with semiconductor macroatoms is proposed. Our quantum hardware consists of an array of quantum dots and the computational degrees of freedom are energy-selected interband optical transitions. The quantum-computing strategy exploits exciton-exciton interactions driven by ultrafast multicolor laser pulses. Contrary to existing proposals based on charge excitations, our approach does not require time-dependent electric fields, thus allowing for a subpicosecond, decoherence-free, operation time scale in realistic semiconductor nanostructures.

The first global quantum simulation of semiconductor-based quantum-cascade lasers is presented. Our three-dimensional approach allows us to study in a purely microscopic way the current-voltage characteristics of state-of-the-art unipolar nanostructures, and therefore to answer the long-standing controversial question: Is charge transport in quantum-cascade lasers mainly coherent or incoherent? Our analysis shows that (i) quantum corrections to the semiclassical scenario are minor and (ii) inclusion of carrier-phonon and carrier-carrier scattering gives excellent agreement with experimental results.

A potential implementation of quantum-computation schemes in semiconductor-based structures is proposed. In particular, an array of quantum dots is shown to be an ideal quantum register for a noiseless information encoding. In addition to the suppression of phase-breaking processes in quantum dots due to the well-known phonon bottleneck, we show that a proper quantum encoding allows one to realize a decoherence-free evolution on a time scale long compared to the femtosecond scale of modern ultrafast laser technology. This result might open the way to the realization of semiconductor-based quantum processors.

The ultrafast dynamics of photoexcited carriers in a semiconductor is investigated by using a Monte Carlo simulation. In addition to a ‘‘conventional’’ Monte Carlo simulation, the coherence of the external light field and the resulting coherence in the carrier system are fully taken into account. This allows us to treat the correct time dependence of the generation process showing a time-dependent linewidth associated with a recombination from states off resonance due to stimulated emission. The subsequent dephasing of the carriers due to scattering processes is analyzed. In addition, the simulation contains the carrier-carrier interaction in Hartree-Fock approximation giving rise to a band-gap renormalization and excitonic effects which cannot be treated in a conventional Monte Carlo simulation where polarization effects are neglected. Thus the approach presents a unified numerical method for the investigation of phenomena occurring close to the band gap and those typical for the energy relaxation of hot carriers.