Interferometric measurements of electric field‐induced displacements in piezoelectric thin films using single‐beam and double‐beam optical detection schemes are reported. It is shown that vibrational response measured with a single‐beam interferometer includes a large contribution of the bending motion of substrate. Therefore, it is difficult to apply single‐beam technique for piezoelectric measurements in thin films. To suppress the bending effect a high‐resolution double‐beam interferometer is proposed. The sensitivity of the interferometer is significantly improved in comparison with previously reported system. The interferometer is shown to resolve small displacements without using a lock‐in technique. An example of the interferometric capabilities is demonstrated with experimental results on electric field, frequency, and time dependences of piezoelectric response for quartz and Pb(Zr,Ti)O₃ thin film.

In this work, we studied the effect of heterovalent Ca, Sr, Pb, and Ba substitution on the crystal structure, dielectric, local ferroelectric, and magnetic properties of the BiFeO3 multiferroic perovskite. Ceramic solid solutions with the general formula Bi0.7A0.3FeO3 (A is a doping element) were prepared and characterized by x-ray diffraction, dielectric, piezoresponse force microscopy (PFM), and magnetic measurements. It is shown that the crystal structure of the compounds is described within the space group R3c, permitting the spontaneous polarization, whose existence was confirmed by the PFM data. Magnetic properties of the solid solutions are determined by the ionic radius of the substituting element. Experimental results suggest that the increase in the radius of the A-site ion leads to the effective suppression of the spiral spin structure of BiFeO3, resulting in the appearance of net magnetization.