Flexing computer memory: Phase change materials leverage changes in structure into differences in electrical resistance that are attractive for computer memory and processing applications. Khan et al . developed a flexible phase change memory device with layers of antimony telluride and germanium telluride deposited directly on a flexible polyimide substrate. The device shows multilevel operation with a low switching current density. The combination of phase change and mechanical properties is attractive for the large number of emerging applications for flexible electronics. —BG

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO₂ gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits.