Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

BiFeO ₃ thin films were fabricated by pulsed laser deposition on Nb–SrTiO ₃ (0 0 1), La _2/3 Sr _1/3 MnO ₃ /SrTiO ₃ (0 0 1), and SrRuO ₃ /SrTiO ₃ (0 0 1) electrode surfaces. All films grew epitaxially along the substrates and were fully strained. The current–voltage curves of the structures revealed that the current level depended on the barrier height at the ferroelectric/bottom electrode interface. Resistive switching behavior was observed in the BiFeO ₃ films grown on all electrodes, which was rationalized in terms of conductive filaments and the variation of the Schottky barrier at the ferroelectric/electrode interfaces due to ferroelectric polarization. The conductive filament model and modulation of the Schottky barriers at film/electrode interfaces due to ferroelectric polarization applied to BiFeO ₃ films on SrRuO ₃ and La _2/3 Sr _1/3 MnO ₃ electrodes, respectively, while a combination of these two mechanisms was suggested to be responsible for the observed resistive switching of BiFeO ₃ film on Nb–SrTiO ₃ .

The nature of the nonlinear magnetoelectric effect is investigated in platelets of single-crystal Y-type hexaferrite with a collinear ferrimagnetic structure. The effect was observed at room temperature as a shift of 1.1-to-1.4 GHz in the ferromagnetic resonance frequency of Ba₂Zn₂Fe₁₂O₂₂ (Zn₂Y) rectangular resonator with the application of an in-plane DC voltage. The shift amounted to 10%–12% of the central frequency which ranged from 8 to 17 GHz (X and Ku-bands). From the experimental results, we estimated the magnetoelectric modification of effective saturation magnetization and found that it scales almost linearly with the applied DC electric power. A phenomenological model for the nonlinear magnetoelectric effect, which considers the hexaferrite magnetic symmetry, is proposed and qualitatively accounts for the observed dependence of magnetic parameters on input power. It is shown that the resonator can operate as an electrically controlled discrete phase shifter with almost $\pi /4$ phase shift and <4 dB insertion losses. These results are of importance for the use of Y-type hexaferrites in electrically tunable planar microwave signal processing devices.

A model for the low-frequency magnetoelectric (ME) effect that takes into consideration the bending deformation in a ferromagnetic and ferroelectric bilayer is presented. Past models, in general, ignored the influence of bending deformation. Based on the solution of the equations of the elastic theory and electrostatics, expressions for the ME voltage coefficients (MEVCs) and ME sensitivity coefficients (MESCs) in terms of the physical parameters of the materials and the geometric characteristic of the structure were obtained. Contributions from both bending and planar deformations were considered. The theory was applied to composites of PZT and Ni with negative magnetostriction, and Permendur, or Metglas, both with positive magnetostriction. Estimates of MEVCs and MESCs indicate that the contribution from bending deformation is significant but smaller than the contribution from planar deformations, leading to a reduction in the net ME coefficients in all the three bilayer systems.

We show that electrically poled ferroelectric matrix considerably enhances the localized magnetostrictive deformations in a ferroelectric-ferrimagnetic composite. Magnetostrain measurements performed on Dy-free and Dy-modified $\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_3\text{−}\mathrm{Pb}\mathrm{Ti}{\mathrm{O}}_3$ (BF-PT) ferroelectric ceramics revealed no measurable macroscopic strain in poled and unpoled Dy-free nonferromagnetic specimens. Dy-modified BF-PT, on the other hand, exhibit ferrimagnetic dysprosium-iron garnet (DyIG) as precipitates and exhibit a macroscopic strain of −4 ppm in the poled state. Despite the small (6%) volume fraction of DyIG, the macroscopic strain in Dy-modified BF-PT is almost 50% of the strain of pure DyIG. Our results suggest that the amplification of the localized magnetostrictive deformation in the ferrimagnetic islands by the neighboring ferroelectric regions is caused by the magnetostrictive stress-induced motion of ferroelectric-ferroelastic domains of the poled ferroelectric matrix.