CMOS-based computing systems that employ the von Neumann architecture are relatively limited when it comes to parallel data storage and processing. In contrast, the human brain is a living computational signal processing unit that operates with extreme parallelism and energy efficiency. Although numerous neuromorphic electronic devices have emerged in the last decade, most of them are rigid or contain materials that are toxic to biological systems. In this work, we report on biocompatible bilayer graphene-based artificial synaptic transistors (BLAST) capable of mimicking synaptic behavior. The BLAST devices leverage a dry ion-selective membrane, enabling long-term potentiation, with ~50 aJ/µm² switching energy efficiency, at least an order of magnitude lower than previous reports on two-dimensional material-based artificial synapses. The devices show unique metaplasticity, a useful feature for generalizable deep neural networks, and we demonstrate that metaplastic BLASTs outperform ideal linear synapses in classic image classification tasks. With switching energy well below the 1 fJ energy estimated per biological synapse, the proposed devices are powerful candidates for bio-interfaced online learning, bridging the gap between artificial and biological neural networks.

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

Bayesian neural networks (BNNs) combine the generalizability of deep neural networks (DNNs) with a rigorous quantification of predictive uncertainty, which mitigates overfitting and makes them valuable for high-reliability or safety-critical applications. However, the probabilistic nature of BNNs makes them more computationally intensive on digital hardware and so far, less directly amenable to acceleration by analog in-memory computing as compared to DNNs. This work exploits a novel spintronic bit cell that efficiently and compactly implements Gaussian-distributed BNN values. Specifically, the bit cell combines a tunable stochastic magnetic tunnel junction (MTJ) encoding the trained standard deviation and a multi-bit domain-wall MTJ device independently encoding the trained mean. The two devices can be integrated within the same array, enabling highly efficient, fully analog, probabilistic matrix-vector multiplications. We use micromagnetics simulations as the basis of a system-level model of the spintronic BNN accelerator, demonstrating that our design yields accurate, well-calibrated uncertainty estimates for both classification and regression problems and matches software BNN performance. This result paves the way to spintronic in-memory computing systems implementing trusted neural networks at a modest energy budget.

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. Device candidates for this application need to produce highly random “coinflips” while also having tunable biasing of the coin. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven magnetization dynamics, often using spin transfer torque (STT) current amplitude to control the random switching of the MTJ free layer magnetization, here called the stochastic write method. There are additional knobs to control the MTJ-RNG, including voltage-controlled magnetic anisotropy (VCMA) and spin orbit torque (SOT), and there is need to more systematically study and compare these methods. We build an analytical model of the MTJ to characterize using VCMA and SOT to generate random bit streams. The results show that both methods produce high quality, uniformly distributed bitstreams. Biasing the bitstreams using either STT current or an applied magnetic field shows a sigmoidal distribution vs. bias amplitude for both VCMA and SOT, compared to less sigmoidal for stochastic write. The energy consumption per sample is calculated to be 0.1 pJ (SOT), 1 pJ (stochastic write), and 20 pJ (VCMA), revealing the potential energy benefit of using SOT and showing using VCMA may require higher damping materials. The generated bitstreams are then applied to two tasks: generating an arbitrary probability distribution and using the MTJ-RNGs as stochastic neurons to perform simulated annealing, where both VCMA and SOT methods show the ability to effectively minimize the system energy with small delay and low energy. These results show the flexibility of the MTJ as a true RNG and elucidate design parameters for optimizing the device operation for applications.

Large-scale long-range ordered anodic aluminum oxide and multilayered nanowires (NWs) are attractive to 3-D nanostructured material applications, such as high-density 3-D magnetic memory. This article demonstrates long-range ordered aluminum oxide made by simple and inexpensive double imprinting with line-patterned stamp and uniform iron-gold multilayered NWs fabricated by galvanostatic electrochemical deposition with a single electrolyte bath. These two structural features show potential for future high-density recording systems that require long-range ordered devices separated from each other by insulation to eliminate crosstalk.

The spatiotemporal nature of neuronal behavior in spiking neural networks (SNNs) makes SNNs promising for edge applications that require high energy efficiency. To realize SNNs in hardware, spintronic neuron implementations can bring advantages of scalability and energy efficiency. Domain wall (DW)-based magnetic tunnel junction (MTJ) devices are well suited for probabilistic neural networks given their intrinsic integrate-and-fire behavior with tunable stochasticity. Here, we present a scaled DW-MTJ neuron with voltage-dependent firing probability. The measured behavior was used to simulate a SNN that attains accuracy during learning compared to an equivalent, but more complicated, multi-weight DW-MTJ device. The validation accuracy during training was also shown to be comparable to an ideal leaky integrate and fire device. However, during inference, the binary DW-MTJ neuron outperformed the other devices after Gaussian noise was introduced to the Fashion-MNIST classification task. This work shows that DW-MTJ devices can be used to construct noise-resilient networks suitable for neuromorphic computing on the edge.