In this paper, the piezoelectric coefficient d₃₃ of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d_33-test should be smaller than the intrinsic value d₃₃ due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d₃₃ with the measurement results d_33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d₃₃ of AlN thin films.

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

A MEMS fabrication process with through-glass vias (TGVs) by laser drilling was presented, and reliability concerns about MEMS packaging with TGV, likes debris and via metallization, were overcome. The via drilling process on Pyrex 7740 glasses was studied using a picosecond laser with a wavelength of 532 nm. TGVs were tapered, the minimum inlet diameter of via holes on 300 μm glasses was 90 μm, and the relative outlet diameter is 48 μm. It took about 9 h and 58 min for drilling 4874 via holes on a four-inch wafer. Debris in ablation was collected only on the laser inlet side, and the outlet side was clean enough for bonding. The glass with TGVs was anodically bonded to silicon structures of MEMS sensors for packaging, electron beam evaporated metal was used to cover the bottom, the side, and the surface of via holes for vertical electrical interconnections. The metal was directly contacted to silicon with low contact resistance. A MEMS gyroscope was made in this way, and the getter was used for vacuum maintenance. The vacuum degree maintained under 1 Pa for more than two years. The proposed MEMS fabrication flow with a simple process and low cost is very suitable for mass production in industry.

In this paper, we report a novel aluminum nitride (AlN) resonant micro-electromechanical systems (MEMS) accelerometer. The spring beams are T-shaped with two masses hanged at the end. This accelerometer is sensitive to the z-axis acceleration due to a thin thickness. Different from the working mechanism of the ordinary MEMS resonant accelerometers, masses of this accelerometer are excited to resonate in-plane. In addition the stiffness of spring beams changes significantly when an out plane (z-axis) inertial force applied on the structure. Therefore, the resonant frequency of the structure will change with the out-plane inertial force. The resonant properties and sensitivities of this AlN accelerometer are simulated by COMSOL Multiphysics. The accelerometer is fabricated and tested. The size of the whole structure is 464x 650 μm². The resonant frequency is 16.10925 kHz at the static state. The sensing-axis sensitivity of this accelerometer is 1.11 Hz/g (i.e., 68.9 ppm/g) tested from -5g to +5g. The linearity of the accelerometer is 0.9954. The cross-axis sensitivities are 0.053 Hz/g (x-axis) and 0.048 Hz/g (y-axis) respectively. The temperature coefficient of frequency (TCF) of this accelerometer is 0.815 Hz/ °C (i.e., 50.6 ppm/°C), tested from 0 °C to 50 °C. [2019-0062]

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl₂/BCl₃/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO₂ is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

In this paper, we report a novel aluminum nitride (AlN) thin-film piezoelectric resonant accelerometer. Different from the ordinary MEMS (micro-electro-mechanical systems) resonant accelerometers, the entire structure of the accelerometer, including the mass and the springs, is excited to resonate in-plane, and the resonance frequency is sensitive to the out-plane acceleration. The structure is centrosymmetrical with serpentine electrodes laid on supporting beams for driving and sensing. The stiffness of the supporting beams changes when an out-plane inertial force is applied on the structure. Therefore, the resonance frequency of the accelerometer will also change under the inertial force. The working principle is analyzed and the properties are simulated in the paper. The proposed AlN accelerometer is fabricated by the MEMS technology, and the structure is released by an ICP isotropic etching. The resonance frequency is 24.66 kHz at a static state. The quality factor is 1868. The relative sensitivity of this accelerometer, defined as the shift in the resonance frequency per gravity unit (1 g = 9.8 m/s²) is 346 ppm/g. The linearity of the accelerometer is 0.9988. The temperature coefficient of frequency (TCF) of this accelerometer is −2.628 Hz/°C (i.e., −106 ppm/°C), tested from −40 °C to 85 °C.