The exceptional adjustability and ambipolar behavior of graphene offer significant potential for next-generation optoelectronics, where the conductivity of graphene is primarily modulated by the interface field of heterojunction. However, interface defects, which are inevitably introduced during fabrication, severely limit the effectiveness of gate voltage modulation. Although the layer-by-layer transfer method can effectively enhance conductivity, it also raises the carrier concentration and impairs the symmetry of ambipolar characteristics. This work presents a stacked multi-gate graphene transistor in which synergistic modulation enables efficient regulation of channel conductivity while maintaining low carrier concentration. Simulations are carried out to analyze how mobility, doping concentration, and the number of stacking layers influence the modulation of conductivity. Experimentally, a three-layer stacked graphene structure with distributed source and drain electrodes is fabricated. The device exhibits pronounced ambipolar transfer characteristics and demonstrates a clear improvement in transconductance compared to its conventional one-layer graphene counterpart. This research offers a feasible design strategy for high-performance, vertically integrated graphene-based electronic devices.