In this paper, a tunable absorber composed of asymmetric grating based on a graphene-dielectric-metal structure is proposed. The absorption of the absorber can be modified from 99.99% to 61.73% in the near-infrared by varying the Fermi energy of graphene, and the absorption wavelength can be tuned by varying the grating period. Furthermore, the influence of other geometrical parameters, the incident angle, and polarization are analyzed in detail by a finite-difference time-domain simulation. The graphene absorbers proposed in this paper have potential applications in the fields of stealth, sense, and photoelectric conversion. When the absorber that we propose is used as a gas sensor, the sensitivity of 200 nm/RIU with FOM can reach up to 159 RIU⁻¹.

Tuning the localized surface plasmon resonance (LSPR) in doped semiconductor nanoparticles (NPs), which represents an important characteristic in LSPR sensor applications, still remains a challenge. Here, indium tin oxide/indium tin alloy (ITO/In-Sn) bilayer films were deposited by electron beam evaporation and the properties, such as the LSPR and surface morphology, were investigated by UV–VIS–NIR double beam spectrophotometer and atomic force microscopy (AFM), respectively. By simply engineering the thickness of ITO/In-Sn NPs without any microstructure fabrications, the LSPR wavelength of ITO NPs can be tuned by a large amount from 858 to 1758 nm. AFM images show that the strong LSPR of ITO NPs is closely related to the enhanced coupling between ITO and In-Sn NPs. Blue shifts of ITO LSPR from 1256 to 1104 nm are also observed in the as-annealed samples due to the higher free carrier concentration. Meanwhile, we also demonstrated that the ITO LSPR in ITO/In-Sn NPs structures has good sensitivity to the surrounding media and stability after 30 d exposure in air, enabling its application prospects in many biosensing devices.

Eu³⁺-doped Y₂O₃-based luminescent materials can be used as a scintillator for electron or high energy β-ray irradiation, which are essential for applications such as electron microscopy and nuclear batteries. Therefore, it is essential to understand their defect mechanisms and to develop materials with excellent properties. In this paper, Y₂O₃-based transparent ceramics with different Eu³⁺ doping concentrations were prepared by solid-state reactive vacuum sintering. This series of transparent ceramic samples exhibits strong red emission under electron beam excitation at the keV level. However, color change appears after the high-energy electron irradiation due to the capture of electrons by the traps in the Y₂O₃ lattice. Optical transmittance, laser-excited luminescence, X-ray photoelectron spectroscopy (XPS), and other analyses indicated that the traps, or the color change, mainly originate from the residual oxygen vacancies, which can be suppressed by high Eu doping. Seen from the cathodoluminescence (CL) spectra, higher doping concentrations of Eu³⁺ showed stronger resistance to electron irradiation damage, but also resulted in lower emissions due to concentration quenching. Therefore, 10% doping of Eu was selected in this work to keep the high emission intensity and strong radiation resistance both. This work helps to enhance the understanding of defect formation mechanisms in the Y₂O₃ matrix and will be of benefit for the modification of scintillation properties for functional materials systems.