High temporal and spatial coherent simultaneous long-wavelength/mid-wavelength (LW/MW) two-color focal plane array (FPA) infrared detection is the cutting-edge technique for third-generation infrared remote sensing. In this Letter, HgCdTe LW/MW two-color infrared detectors were designed and fabricated. The top long-wavelength and bottom mid-wavelength infrared planar photodiodes were processed by selective ${\mathrm{B}}^{+}$-implantation after etching the long-wavelength epilayer into a curvature and exposing the mid-wavelength layers for the implantation of the $n$ region of the MW photodiode by a micro-mesa array technique. A $128\times 128\mathrm{MW}/\mathrm{LW}$ HgCdTe infrared FPA detector is fabricated photo-lithographically by simultaneous nonplanar ${\mathrm{B}}^{+}$-implantation of the LW and MW photodiodes, passivation and metallization of the sidewalls, mesa isolation, and flip-chip hybridization with a read-out integrated circuit. The inner mechanisms for suppressing the cross talk and improving photoresponse have been carried out by combining experimental work with numerical simulations.

Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type ${\mathrm{Hg}}_{1-x}{\mathrm{Cd}}_x\mathrm{Te}$ ($x=0.22$) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.