Improving Nanowire Photovoltaics: In principle, solar cells based on arrays of nanowires made from compound inorganic semiconductors, such as indium phosphide (InP), should decrease materials and fabrication costs compared with planar junctions. In practice, device efficiencies tend to be low because of poor light absorption and increased rates of unproductive charge recombination in the surface region. Wallentin et al. (p. 1057 , published online 17 January) now report that arrays of p-i-n InP nanowires (that switch from positive to negative doping), grown to millimeter lengths, can be optimized by varying the nanowire diameter and length of the n-doped segment. Efficiencies as high as 13.8% were achieved, which are comparable to the best planar InP photovoltaics.

Inorganic nanowires are under intense research for large scale solar power generation intended to ultimately contribute a substantial fraction to the overall power mix. Their unique feature is to allow different pathways for the light absorption and carrier transport. In this publication we investigate the properties of a nanowire array acting as a photonic device governed by wave-optical phenomena. We solve the Maxwell equations and calculate the light absorption efficiency for the AM1.5d spectrum and give recommendations on the design. Due to concentration of the incident sunlight at a microscopic level the absorptivity of nanowire solar cells can exceed the absorptivity of an equal amount of material used in thin-film devices. We compute the local density of photon states to assess the effect of emission enhancement, which influences the radiative lifetime of excess carriers. This allows us to compute the efficiency limit within the framework of detailed balance. The efficiency is highly sensitive with respect to the diameter and distance of the nanowires. Designs featuring nanowires below a certain diameter will intrinsically feature low short-circuit current that cannot be compensated even by increasing the nanowire density. Optimum efficiency is not achieved in densely packed arrays, in fact spacing the nanowires further apart (simultaneously decreasing the material use) can even improve efficiency in certain scenarios. We observe absorption enhancement reducing the material use. In terms of carrier generation per material use, nanowire devices can outperform thin-film devices by far.

We investigate the anisotropic optical gain in non-$c$-plane InGaN quantum wells with 20% indium content including band-gap renormalization and the screening of the quantum confined Stark effect. Waveguide modes and their polarizations are determined as TE and TM modes or extraordinary and ordinary modes, depending on the birefringence and the orientation of the laser diode’s ridge waveguide relative to the $c$ axis. The band structures and optical matrix elements along the polarization directions are calculated using a $6\times 6$ $k\cdot p$ Hamiltonian and a self-consistent Schrödinger-Poisson solver. From these calculations the reduced density of states and the optical gain for the different polarizations are determined in the free-carrier picture with an ad hoc inclusion of the band-gap renormalization and compared to a $c$-plane quantum well. It is found that for high indium concentrations the gain can be significantly increased by going from the $c$ plane to a semipolar or a nonpolar crystal orientation. However, due to birefringence and composition of the topmost valence-band wave function, the ridge has to be oriented along the $\left[\overline{1}\overline{1}23\right]$ direction for semipolar and along the [0001] direction for nonpolar laser diodes.

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination coefficient C is typically obtained from efficiency measurements using mathematical models. However, C coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.

We analyze the electromagnetic properties of InP/InAs nanowire solar cells for different geometries. We address both eigenvalue calculations to determine the wave propagation as well as source problems to simulate direct perpendicular illumination by three-dimensional finite element calculations. We demonstrate the validity of a 2D waveguide modal analysis as a method of estimating the results of the computationally far more demanding 3D analysis. The resulting data is employed in a detailed balance analysis in order to determine the optimum set of bandgap energies for a single-junction and dual-junction cell as well as the corresponding efficiency limit. The efficiency of the nanowire design can approach the efficiency of conventional thin-film designs despite the low volume fill-factor.