Bulk synthesis of few-layer graphene (FLG) for industrial applications still remains a challenge for researchers. Here, we report a very simple technique for bulk synthesis of FLG by femtosecond laser ablation of graphite powder suspended in ethanol without the requirement of a controlled environment. Graphite powder, with an average particle size <20 μm, was suspended uniformly in ethanol and ablated at room temperature using fs pulses (wavelength ~800 nm and an input beam diameter ~8 mm) followed by ultrasonication to obtain FLG with a lateral size of ~1 μm. Raman spectroscopy and high-resolution transmission electron microscopy data confirmed the nature and morphology of the FLG. The quality and number of layers in the FLG could be controlled by tuning the laser parameters.

In this paper, we report on the interesting phenomenon of magnetic phase transitions (MPTs) observed under the combined influence of an electric field ( E ) and temperature ( T ) leading to a thermo-electromagnetic effect on the pristine single-layer zigzag graphene nanoribbon (szGNR). Density functional theory-based first principles calculations have been deployed for this study on the intrinsic magnetic properties of graphene. Interestingly, by tuning electric field ( E ) and temperature ( T ), three distinct magnetic phase behaviors, para-, ferro- and antiferromagnetic are exhibited in pristine szGNR. We have investigated the unrivaled positional parameters of these MPTs. MPT occurring in the system also follows a positional trend and the change in these positional parameters with regard to the size of the szGNR along with the varied E and T is studied. We propose a bow-tie schematic to induce the intrinsic magnetism in graphene and present the envisaged model of the processor application with the reported intrinsic MPT in szGNR. This fundamental insight into the intrinsic MPTs in graphene is an essential step towards developing graphene-based spin-transfer torque magnetoresistive random access memory, quantum computing devices, magnonics and spintronic memory application.