Electron transfer from valence to conduction band states in semiconductors is the basis of modern electronics. Here, attosecond extreme ultraviolet (XUV) spectroscopy is used to resolve this process in silicon in real time. Electrons injected into the conduction band by few-cycle laser pulses alter the silicon XUV absorption spectrum in sharp steps synchronized with the laser electric field oscillations. The observed ~450-attosecond step rise time provides an upper limit for the carrier-induced band-gap reduction and the electron-electron scattering time in the conduction band. This electronic response is separated from the subsequent band-gap modifications due to lattice motion, which occurs on a time scale of 60 ± 10 femtoseconds, characteristic of the fastest optical phonon. Quantum dynamical simulations interpret the carrier injection step as light-field–induced electron tunneling.

Over the last few years, extraordinary advances in experimental and theoretical tools have allowed us to monitor and control matter at short time and atomic scales with a high degree of precision. An appealing and challenging route toward engineering materials with tailored properties is to find ways to design or selectively manipulate materials, especially at the quantum level. To this end, having a state-of-the-art ab initio computer simulation tool that enables a reliable and accurate simulation of light-induced changes in the physical and chemical properties of complex systems is of utmost importance. The first principles real-space-based Octopus project was born with that idea in mind, i.e., to provide a unique framework that allows us to describe non-equilibrium phenomena in molecular complexes, low dimensional materials, and extended systems by accounting for electronic, ionic, and photon quantum mechanical effects within a generalized time-dependent density functional theory. This article aims to present the new features that have been implemented over the last few years, including technical developments related to performance and massive parallelism. We also describe the major theoretical developments to address ultrafast light-driven processes, such as the new theoretical framework of quantum electrodynamics density-functional formalism for the description of novel light–matter hybrid states. Those advances, and others being released soon as part of the Octopus package, will allow the scientific community to simulate and characterize spatial and time-resolved spectroscopies, ultrafast phenomena in molecules and materials, and new emergent states of matter (quantum electrodynamical-materials).

Shining a fast light on diamonds: Conceptually, the electronic structure of matter is a fixed scaffold of energy levels, which electrons climb with the help of light absorption. In reality, the light's electromagnetic field distorts the scaffold, a phenomenon that becomes increasingly evident with rising field intensity. Lucchini et al. studied a manifestation of this phenomenon, termed the dynamical Franz Keldysh effect, in diamond substrates exposed to sudden, moderately intense infrared fields. Using attosecond probe pulses and accompanying theoretical simulations, they resolved and accounted for the extremely rapid ensuing electron dynamics. Science , this issue p. 916

We employ a quantum Liouville equation with relaxation to model the recently observed anomalous Hall effect in graphene irradiated by an ultrafast pulse of circularly polarized light. In the weak-field regime, we demonstrate that the Hall effect originates from an asymmetric population of photocarriers in the Dirac bands. By contrast, in the strong-field regime, the system is driven into a nonequilibrium steady state that is well described by topologically nontrivial Floquet-Bloch bands. Here, the anomalous Hall current originates from the combination of a population imbalance in these dressed bands together with a smaller anomalous velocity contribution arising from their Berry curvature. This robust and general finding enables the simulation of electrical transport from light-induced Floquet-Bloch bands in an experimentally relevant parameter regime and creates a pathway to designing ultrafast quantum devices with Floquet-engineered transport properties.

High-order-harmonic generation by a highly nonlinear interaction of infrared laser fields with matter allows for the generation of attosecond pulses in the XUV spectral regime. This process, well established for atoms, has been recently extended to the condensed phase. Remarkably well-pronounced harmonics up to order $\sim 30$ have been observed for dielectrics. We establish a route toward an ab initio multiscale simulation of solid-state high-order-harmonic generation. We find that mesoscopic effects of the extended system, in particular the realistic sampling of the entire Brillouin zone, the pulse propagation in the dense medium, and the inhomogeneous illumination of the crystal, have a strong effect on the harmonic spectra. Our results provide an explanation for the formation of clean harmonics and have implications for a wide range of nonlinear optical processes in dense media.