A self-organizing map (SOM) is a powerful unsupervised learning neural network for analyzing high-dimensional data in various applications. However, hardware implementation of SOM is challenging because of the complexity in calculating the similarities and determining neighborhoods. We experimentally demonstrated a memristor-based SOM based on Ta/TaOx/Pt 1T1R chips for the first time, which has advantages in computing speed, throughput, and energy efficiency compared with the CMOS digital counterpart, by utilizing the topological structure of the array and physical laws for computing without complicated circuits. We employed additional rows in the crossbar arrays and identified the best matching units by directly calculating the similarities between the input vectors and the weight matrix in the hardware. Using the memristor-based SOM, we demonstrated data clustering, image processing and solved the traveling salesman problem with much-improved energy efficiency and computing throughput. The physical implementation of SOM in memristor crossbar arrays extends the capability of memristor-based neuromorphic computing systems in machine learning and artificial intelligence.
Synaptic devices with bipolar analog resistive switching behavior are the building blocks for memristor-based neuromorphic computing. In this work, a fully complementary metal-oxide semiconductor (CMOS)-compatible, forming-free, and non-filamentary memristive device (Pd/Al2O3/TaOx/Ta) with bipolar analog switching behavior is reported as an artificial synapse for neuromorphic computing. Synaptic functions, including long-term potentiation/depression, paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are implemented based on this device; the switching energy is around 50 pJ per spike. Furthermore, for applications in artificial neural networks (ANN), determined target conductance states with little deviation (<1%) can be obtained with random initial states. However, the device shows non-linear conductance change characteristics, and a nearly linear conductance change behavior is obtained by optimizing the training scheme. Based on these results, the device is a promising emulator for biology synapses, which could be of great benefit to memristor-based neuromorphic computing.
Inspired by biological processes, feature learning techniques, such as deep learning, have achieved great success in various fields. However, since biological organs may operate differently from semiconductor devices, deep models usually require dedicated hardware and are computation-complex. High energy consumption has made deep model growth unsustainable. We present an approach that directly implements feature learning using semiconductor physics to minimize disparity between model and hardware. Following this approach, a feature learning technique based on memristor drift-diffusion kinetics is proposed by leveraging the dynamic response of a single memristor to learn features. The model parameters and computational operations of the kinetics-based network are reduced by up to 2 and 4 orders of magnitude, respectively, compared with deep models. We experimentally implement the proposed network on 180 nm memristor chips for various dimensional pattern classification tasks. Compared with memristor-based deep learning hardware, the memristor kinetics-based hardware can further reduce energy and area consumption significantly. We propose that innovations in hardware physics could create an intriguing solution for intelligent models by balancing model complexity and performance.
Neuro-symbolic artificial intelligence has garnered considerable attention amid increasing industry demands for high-performance neural networks that are interpretable and adaptable to previously unknown problem domains with minimal reconfiguration. However, implementing neuro-symbolic hardware is challenging due to the complexity in symbolic knowledge representation and calculation. We experimentally demonstrated a memristor-based neuro-fuzzy hardware based on TiN/TaOx/HfOx/TiN chips that is superior to its silicon-based counterpart in terms of throughput and energy efficiency by using array topological structure for knowledge representation and physical laws for computing. Intrinsic memristor variability is fully exploited to increase robustness in knowledge representation. A hybrid in situ training strategy is proposed for error minimizing in training. The hardware adapts easier to a previously unknown environment, achieving ~6.6 times faster convergence and ~6 times lower error than deep learning. The hardware energy efficiency is over two orders of magnitude greater than field-programmable gate arrays. This research greatly extends the capability of memristor-based neuromorphic computing systems in artificial intelligence.
Parallel and energy-efficient searching of the shortest paths on a large graph is challenging. Conventional methods commonly used are sequential and computing intensive, rendering them inadequate for addressing large-scale and real-time situations. Here, we propose a highly parallel, computation- and energy-efficient approach to shortest path–based graph learning based on an emerging memristor spiking neural network via algorithm-device codesign. The shortest path is obtained parallelly in nature using simultaneous spike traveling instead of arithmetic calculation, achieving extremely low time and space complexity. A nonlinear weight mapping approach is proposed to counterbalance the neuron intrinsic nonlinearity to guarantee accuracy to support large-scale graphs. The memristor hardware capability is experimentally demonstrated in unsupervised and supervised classification tasks. The estimated energy efficiency of 517.82 giga-traversal edges per second per watt outperforms field programmable gate arrays by three to four orders of magnitude, providing a pathway toward highly energy-efficient graph computing hardware.