This paper presents a 10 kW outer-rotor field-modulated permanent magnet vernier generator tailored for low-speed direct-drive applications. It employs an outer-rotor Spoke-array configuration, which effectively mitigates the leakage flux between adjacent pole pairs. First, the topology and operating principle of the proposed generator are elaborated. Analytical calculations of key design parameters are then performed to accelerate the modeling process. A systematic parametric sweep is conducted to optimize the motor parameters, based on which a 2D finite element analysis model is established. Comprehensive FEA simulations are carried out to investigate its flux regulation capability, static and dynamic characteristics, and permanent magnet demagnetization risk. The results demonstrate that the Spoke-array permanent magnet array effectively suppresses leakage flux, achieving a volumetric power density of 387.5 kW/m³, and the no-load back electromotive force achieves a peak amplitude of 270 V with a total harmonic distortion as low as 3.7%, which is significantly higher than that of conventional permanent magnet vernier generators. Finally, a 30-slot/23-pole prototype is fabricated and tested. The experimental results show excellent agreement with the simulation predictions, validating the effectiveness of the proposed design.

To address the turn-off overvoltage challenge arising from the rapid interruption of Low Voltage DC Solid-State Circuit Breakers (SSCBs), this paper proposes a high-precision behavioral modeling method for domestic SiC MOSFETs. The model is constructed based on the physical structure of the device, integrating a modified EKV-based static current model and a voltage-dependent nonlinear parasitic capacitance model described by piecewise functions. Model parameters are efficiently extracted from datasheets and measurement data using a composite optimization strategy combining the Genetic Algorithm and the Levenberg–Marquardt algorithm. The model is implemented in LTspice, and its accuracy in both static and dynamic characteristics is validated by comparing the simulation waveforms with experimental results. Based on the validated model, the turn-off process is subdivided into four distinct stages, with an equivalent circuit established for each. A systematic analysis reveals the intrinsic physical mechanism of the voltage spike and oscillation, which results from interaction among the drive circuit parameters, system parameters, and the nonlinear capacitances of the device. The research outcomes provide effective theoretical guidance and a design tool for simulation modeling, turn-off stress assessment, and snubber circuit optimization for SSCBs utilizing SiC MOSFETs.