Seung Hwan Lee

Prof. Dr. Seung Hwan Lee

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Research Focus & Metrics

Academic Career Length

27Years (2000-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 December 2017 in Nature Communications
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Journal Article
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CDChao Du
Chao Du
FCFuxi Cai
Fuxi Cai
MZMohammed A. Zidan
Mohammed A. Zidan
WMWen Ma
Wen Ma
SLSeung Hwan Lee
Seung Hwan Lee
WLWei Lu
Wei Lu
Reservoir computing systems utilize dynamic reservoirs having short-term memory to project features from the temporal inputs into a high-dimensional feature space. A readout function layer can then effectively analyze the projected features for tasks, such as classification and time-series analysis. The system can efficiently compute complex and temporal data with low-training cost, since only the readout function needs to be trained. Here we experimentally implement a reservoir computing system using a dynamic memristor array. We show that the internal ionic dynamic processes of memristors allow the memristor-based reservoir to directly process information in the temporal domain, and demonstrate that even a small hardware system with only 88 memristors can already be used for tasks, such as handwritten digit recognition. The system is also used to experimentally solve a second-order nonlinear task, and can successfully predict the expected output without knowing the form of the original dynamic transfer function.

15 July 2019 in Nature Electronics
Verified
Journal Article
Closed access
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FCFuxi Cai
Fuxi Cai
JCJustin M. Correll
Justin M. Correll
SLSeung Hwan Lee
Seung Hwan Lee
YLYong Lim
Yong Lim
VBVishishtha Bothra
Vishishtha Bothra
WLWei Lu
Wei Lu

14 October 2019 in Nature Electronics
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Journal Article
Closed access
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JMJohn Moon
John Moon
WMWen Ma
Wen Ma
JSJong Hoon Shin
Jong Hoon Shin
FCFuxi Cai
Fuxi Cai
CDChao Du
Chao Du
WLWei D. Lu
Wei D. Lu

17 January 2020 in Nano Research
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Journal Article
Closed access
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SLSeung Hwan Lee
Seung Hwan Lee
XZXiaojian Zhu
Xiaojian Zhu
WLWei Lu
Wei Lu
With the slowing down of the Moore’s law and fundamental limitations due to the von-Neumann bottleneck, continued improvements in computing hardware performance become increasingly more challenging. Resistive switching (RS) devices are being extensively studied as promising candidates for next generation memory and computing applications due to their fast switching speed, excellent endurance and retention, and scaling and three-dimensional (3D) stacking capability. In particular, RS devices offer the potential to natively emulate the functions and structures of synapses and neurons, allowing them to efficiently implement neural networks (NNs) and other in-memory computing systems for data intensive applications such as machine learning tasks. In this review, we will examine the mechanisms of RS effects and discuss recent progresses in the application of RS devices for memory, deep learning accelerator, and more faithful brain-inspired computing tasks. Challenges and possible solutions at the device, algorithm, and system levels will also be discussed.

25 February 2020 in ACS Applied Electronic Materials
Verified
Journal Article
Closed access
SLSeung Hwan Lee
Seung Hwan Lee
JMJohn Moon
John Moon
YJYeonJoo Jeong
YeonJoo Jeong
JLJihang Lee
Jihang Lee
XLXinyi Li
Xinyi Li
WLWei Lu
Wei Lu

1 December 2019
Verified
Conference Paper
Closed access
QWQiwen Wang
Qiwen Wang
XWXinxin Wang
Xinxin Wang
SLSeung Hwan Lee
Seung Hwan Lee
FMFan-Hsuan Meng
Fan-Hsuan Meng
WLWei D. Lu
Wei D. Lu
State-of-the-art deep neural networks (DNNs) have been successfully mapped on an RRAM-based tiled in-memory computing (IMC) architecture. Effects of moderate array size and quantized partial products (PPs) due to ADC precision constraints have been analyzed. Methods were developed to solve these challenges and preserve DNN accuracies and IMC performance gains in the tiled architecture. Popular models including VGG-16 and MobileNet have been successfully implemented and tested on ImageNet dataset.