Resonant mass sensors based on micro/nanoelectromechanical systems (MEMS/NEMS) offer a promising approach for label-free gravimetric detection. However, practical applications often require not only high sensitivity but also improved loading repeatability and reduced dependence on mass loading position. In this work, a suspended resonant mass sensor based on a 10 nm-thick Hf_0.5Zr_0.5O₂ (HZO) piezoelectric film is proposed. A central silicon loading platform is introduced to provide a mechanically robust and spatially uniform sensing region. A Kirchhoff plate model incorporating residual stress is established to analyze the effects of residual stress and platform geometry on the resonant characteristics. The device is fabricated by combining SOI micromachining with wet transfer of the ultrathin HZO film. Laser Doppler vibrometry measurements show a first-order resonant frequency of 1.303 MHz and a quality factor of 342, corresponding to an extracted residual stress of approximately 1.319 GPa. Finite element simulations calibrated by experimental parameters indicate a uniform first-mode displacement distribution and a linear frequency response to added mass from 0 to 1 ng. The obtained mass sensitivities are 150.7 Hz/pg and 166.8 Hz/pg from finite element and analytical models, respectively. The proposed structure provides a feasible route toward repeatable pg-level resonant mass sensing based on ultrathin piezoelectric films.