Integration of lead zirconate titanate (PZT) films on metallic substrates is important for flexible piezoelectric devices, but achieving highly textured crystallinity without detrimental interfacial diffusion or oxidation remains challenging. In this work, PZT thick films (~1.3 μm) were deposited on titanium substrates using radio-frequency magnetron sputtering at 400 °C followed by rapid thermal processing at 640 °C for 2.5 min. A conductive LaNiO₃ buffer layer was introduced to promote the nucleation of the perovskite phase and suppress interfacial degradation. The resulting PZT films on the LNO/Pt/Ti substrates exhibit a strong (001) preferred orientation and a dense microstructure. The films show a large remnant polarization P_r of ~61 μC cm⁻² and a low coercive field E_c of ~56 kV cm⁻¹ at 60 V, together with a dielectric constant ε_r of ~1350–1612 and a dielectric loss tanδ ≤ 0.06 in the frequency range of 1 kHz to 1 MHz. Patterned Pt/PZT/LNO/Pt/Ti cantilevers yield a transverse piezoelectric coefficient e_31,f of ~−6.7 C/m², significantly outperforming reported piezoelectric films deposited on Ti. These results demonstrate that controlled nucleation and rapid thermal crystallization enable highly textured PZT films on reactive metallic substrates, providing a viable route for flexible piezoelectric MEMS devices.

Integration of lead zirconate titanate (PZT) films on metallic substrates is important for flexible piezoelectric devices, but achieving highly textured crystallinity without detrimental interfacial diffusion or oxidation remains challenging. In this work, PZT thick films (~1.3 μm) were deposited on titanium substrates using radio-frequency magnetron sputtering at 400 °C followed by rapid thermal processing at 640 °C for 2.5 min. A conductive LaNiO₃ buffer layer was introduced to promote nucleation of the perovskite phase and suppress interfacial degradation. The resulting PZT films on LNO/Pt/Ti substrates exhibit a strong (001) preferred orientation and dense micro-structure. The films show a large remnant polarization Pr of ~61 μC cm^-2 and a low coercive field E_c of ~56 kV cm⁻¹ at 60 V, together with dielectric constants ε_r of ~1350–1612 and dielectric loss tanδ ≤ 0.06 in the frequency range of 1 kHz–1 MHz. Patterned Pt/PZT/LNO/Pt/Ti cantilevers yield a transverse piezoelectric coefficient e_31,f of ~ –6.7 C m^-2, significantly outperforming reported piezoelectric films deposited on Ti. These results demonstrate that controlled nucleation and rapid thermal crystallization enable highly textured PZT films on reactive metallic substrates, providing a viable route for flexible piezoelectric MEMS devices.