The thermal and electrical properties in the (Ge:Sb:Te) system have been determined using photoacoustic and Hall measurements, respectively. The thermal diffusivity, thermal conductivity, hole concentration, and Hall mobility are analyzed as a function of the tellurium concentration in the bulk alloys. It is found that both the thermal and electrical parameters depend strongly on the alloy composition and on the crystalline structure of the solid compound. The thermal and electrical measured parameters correlate well with the density of holes arising from Ge and/or Sb vacancies.

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of ${\mathrm{SiO}}_2$ in the composition of porous silicon material.

A non‐separation approach to determine the spark‐processed porous silicon thermal parameters is presented. This thermal characterization was performed through application of the photoacoustic technique, in combination with compositional models for spark‐processed porous silicon samples. The thermal parameters obtained are in agreement with existing studies about the composition of this material. This approach opens the possibility of performing the thermal characterization of other porous semiconductors and analogous materials.