Electronic neural interfaces have been developed to restore function to the nervous system for patients with neural disorders. A conformal and chronically stable dielectric encapsulation is required to protect the neural interface device from the harsh physiological environment and localize the active electrode tips. Chemical vapor deposited Parylene-C films were studied as a potential implantable dielectric encapsulation material using impedance spectroscopy and leakage current measurements. Both tests were performed in 37degC saline solution, and showed that the films provided an electrically insulating encapsulation for more than one year. Isotropic and anisotropic oxygen plasma etching processes were compared for removing the Parylene-C insulation to expose the active electrode tips. Also, the relationship between tip exposure and electrode impedance was determined. The conformity and the uniformity of the Parylene-C coating were assessed using optical microscopy, and small thickness variations on the complex 3-D electrode arrays were observed. Parylene C was found to provide encapsulation and electrical insulation required for such neural interface devices for more than one year. Also, oxygen plasma etching was found to be an effective method to etch and pattern Parylene-C films.

Neural interfaces connect signal processing electronics to the nervous system via implanted microelectrode arrays such as the Utah electrode array (UEA). The active sites of the UEA are coated with thin films of either platinum (Pt) or iridium oxide (IrOx). Pt and IrOx have attracted attention as a stimulating or recording material due to their ability to transfer between ionic and electronic current and to resist corrosion. The physical, mechanical, chemical, electrical and optical properties of thin films depend on the method and deposition parameters used to deposit the films. In this work, surface morphology, impedance and charge capacity of Pt and sputtered iridium oxide film (SIROF) were investigated and compared with each other. UEAs with similar electrode area and shape were employed in this study. DC sputtering was used to deposit Pt films and pulsed-dc reactive sputtering was used to deposit SIROF. The electrodes coated with SIROF and Pt were characterized by scanning electron microscopy, cyclic voltammetry, electrochemical impedance spectroscopy and potential transient measurements to measure charge injection capacity (CIC). SIROF and Pt selectively deposited on the electrode tip had dendrite and granular microstructure, respectively. The CIC of unbiased SIROF and Pt was 2 and 0.3 mC cm(-2), respectively. The average impedance at 1 kHz, of SIROF and Pt electrodes, was 6 kOmega and 125 kOmega, respectively. Low impedance and high CIC make SIROF promising stimulation/recording material for neural prosthetic applications.

Among the currently available neural interface devices, there has been a need for a penetrating electrode array with a high electrode-count and high electrode-density (the number of electrodes/mm(2)) that can be used for electrophysiological studies of sub-millimeter neuroanatomical structures. We have developed such a penetrating microelectrode array with both a high electrode-density (25 electrodes/mm(2)) and high electrode-count (up to 96 electrodes) for small nervous system structures, based on the existing Utah Slanted Electrode Array (USEA). Such high electrode-density arrays are expected to provide greater access to nerve fibers than the conventionally spaced USEA especially in small diameter nerves. One concern for such high density microelectrode arrays is that they may cause a nerve crush-type injury upon implantation. We evaluated this possibility during acute (<10 h) in vivo experiments with electrode arrays implanted into small diameter peripheral nerves of anesthetized rats (sciatic nerve) and cats (pudendal nerve). Successful intrafascicular implantation and viable nerve function was demonstrated via microstimulation, single-unit recordings and histological analysis. Measurements of the electrode impedances and quantified electrode dimensions demonstrated fabrication quality. The results of these experiments show that such high density neural interfaces can be implanted acutely into neural tissue without causing a complete nerve crush injury, while mediating intrafascicular access to fibers in small diameter peripheral nerves. This new penetrating microelectrode array has characteristics un-matched by other neural interface devices currently available for peripheral nervous system neurophysiological research.