Tommaso Salzillo

Dr. Tommaso Salzillo

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
orcid

Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 April 2016 in Crystal Growth & Design
Verified
Journal Article
Closed access
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
MMMatteo Masino
Matteo Masino
GKGabriele Kociok-Köhn
Gabriele Kociok-Köhn
DNDaniele Di Nuzzo
Daniele Di Nuzzo
EVElisabetta Venuti
Elisabetta Venuti
ECEnrico Da Como
Enrico Da Como

26 July 2017 in The Journal of Physical Chemistry Letters
Verified
Journal Article
Open access
OMOlga Natalia Bedoya Martinez
Olga Natalia Bedoya Martinez
BSBenedikt Schrode
Benedikt Schrode
AJAndrew O. F. Jones
Andrew O. F. Jones
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
CRChristian Ruzié
Christian Ruzié
RRRoland Resel
Roland Resel
A combined experimental and theoretical approach, consisting of lattice phonon Raman spectroscopy and density functional theory (DFT) calculations, is proposed as a tool for lattice dynamics characterization and polymorph phase identification. To illustrate the reliability of the method, the lattice phonon Raman spectra of two polymorphs of the molecule 2,7-dioctyloxy[1]benzothieno[3,2-b]benzothiophene are investigated. We show that DFT calculations of the lattice vibrations based on the known crystal structures, including many-body dispersion van der Waals (MBD-vdW) corrections, predict experimental data within an accuracy of ≪5 cm–1 (≪0.6 meV). Due to the high accuracy of the simulations, they can be used to unambiguously identify different polymorphs and to characterize the nature of the lattice vibrations and their relationship to the structural properties. More generally, this work implies that DFT-MBD-vdW is a promising method to describe also other physical properties that depend on lattice dynamics like charge transport.

9 March 2018 in Crystal Growth & Design
Verified
Journal Article
Closed access
JHJames Martindale Henderson
James Martindale Henderson
MMMatteo Masino
Matteo Masino
LHLauren E. Hatcher
Lauren E. Hatcher
GKGabriele Kociok-Köhn
Gabriele Kociok-Köhn
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
ECEnrico Da Como
Enrico Da Como

18 July 2018 in Journal of Chemical Theory and Computation
Verified
Journal Article
Closed access
OMOlga Natalia Bedoya Martinez
Olga Natalia Bedoya Martinez
AGAndrea Giunchi
Andrea Giunchi
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
Elisabetta VenutiElisabetta Venuti
Elisabetta Venuti
RVRaffaele Guido Della Valle
Raffaele Guido Della Valle
EZEgbert Zojer
Egbert Zojer

29 September 2023 in Advanced Functional Materials
Verified
Journal Article
Open access
ASAndrea Stefani
Andrea Stefani
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
PMPatrizia Mussini
Patrizia Mussini
TBTiziana Benincori
Tiziana Benincori
Massimo InnocentiMassimo Innocenti
Massimo Innocenti
Claudio FontanesiClaudio Fontanesi
Claudio Fontanesi
In this paper it is experimentally demonstrated that the electron‐spin/molecular‐handedness interaction plays a fundamental role in the chiral recognition process. This conclusion is inferred comparing current versus potential (I–V) curves recorded using chiral electrode surfaces, which are obtained via chemisorption of an enantiopure thiophene derivative: 3,3′‐bibenzothiophene core functionalized with 2,2′‐bithiophene wings (BT2T4). The chiral recognition capability of these chiral‐electrodes is probed via cyclic voltammetry measurements, where, Ag nanoparticles (AgNPs) capped with enantiopure BT2T4 (BT2T4@AgNP) are used as the chiral redox probe. Then, the interface handedness is explored by recording spin‐polarized I–V curves in spin‐dependent electrochemistry (SDE) and magnetic‐conductive atomic force microscopy (mc‐AFM) experiments. The quality of the interfaces is thoroughly cross‐checked using X‐ray photoemission spectroscopy, Raman, electrodesorption measurements, which further substantiate the metal(electrode)‐sulfur(thiophene) central role in the chemisorption process. Spin‐polarization values of about 15% and 30% are obtained in the case of SDE and mc‐AFM experiments, respectively.

15 May 2021 in Journal of Materials Chemistry C
Verified
Journal Article
Open access
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Adrián TamayoAdrián Tamayo
Adrián Tamayo
SHSebastian Hofer
Sebastian Hofer
Tommaso SalzilloTommaso Salzillo
Tommaso Salzillo
CRChristian Ruzié
Christian Ruzié
GSGuillaume Schweicher
Guillaume Schweicher
Marta Mas-TorrentMarta Mas-Torrent
Marta Mas-Torrent
Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s−1) and high (10 mm s−1) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. The highest mobility is found along the coating direction, which corresponds to the crystallographic a-axis. In contrast, at high coating speed the films are crystallographically less ordered but with better thin film homogeneity and exhibit isotropic electrical characteristics. Best mobilities are found in films prepared at high coating speeds with the blended semiconductor. This work demonstrates the interplay between the crystal packing and thin film morphology and uniformity and their impact on the device performance.