Chengguo Liu

Mr. Chengguo Liu

orcid

Research Focus & Metrics

Academic Career Length

1Year (2026-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
1 July 2026 in Chemistry
Verified
Journal Article
Open access
PDF file
XLXin Liu
Xin Liu
CLChengguo Liu
Chengguo Liu
THTingting Hou
Tingting Hou
FSFanbei Sun
Fanbei Sun
KXKexuan no Xie
Kexuan no Xie
YDYang Dingyu
Yang Dingyu
CsPbI2Br, an all-inorganic cesium–lead mixed-halide perovskite, has established itself as a leading contender for next-generation photovoltaics, owing to its near-optimal direct bandgap, exceptional thermal stability, and favorable optoelectronic characteristics. These attributes make it a versatile candidate for both high-efficiency single-junction devices and wide-bandgap top cells in tandem architectures with silicon or low-bandgap perovskites. However, the commercialization of CsPbI2Br perovskite solar cells (PSCs) is severely hindered by inherent interfacial challenges, including halide segregation under operational stress, high density of interfacial defects, energy-level misalignment between the perovskite and charge transport layers (CTLs), and chemical incompatibility at hetero-interfaces. These factors limit power conversion efficiency (PCE) and long-term operational stability. Interface engineering has thus become the pivotal strategy to address these bottlenecks, enabling transformative improvements in device performance. This review comprehensively summarizes the state-of-the-art interface engineering strategies for CsPbI2Br PSCs, including molecular passivation, construction of 2D/3D heterostructures, design of composite interlayers, and development of dopant-free, stable CTLs. The underlying mechanisms of defect passivation, non-radiative recombination suppression, energy-level alignment optimization, and ion migration inhibition are systematically elucidated. Furthermore, we discuss critical remaining challenges, including the trade-off between phase stability and optoelectronic quality, interfacial delamination due to thermal expansion mismatch, and scalable fabrication of interface-modified large-area devices. Finally, future research directions are proposed, emphasizing the development of multifunctional interfacial materials, all-inorganic interface architectures, in situ characterization combined with computational modeling, and integration into tandem photovoltaic systems. By consolidating current knowledge and highlighting promising frontiers, this review aims to guide the rational design of high-performance, stable, and commercially viable CsPbI2Br PSCs, accelerating their role in the global transition toward renewable energy.

27 June 2026 in Nanomaterials
Verified
Journal Article
Open access
PDF file
XLXin Liu
Xin Liu
CLChengguo Liu
Chengguo Liu
WLWei Li
Wei Li
WSWangyang Song Wangyang Song
Wangyang Song Wangyang Song
XLXiaoxuan Li
Xiaoxuan Li
YDYang Dingyu
Yang Dingyu
Interfacial defect passivation has emerged as a critical strategy for mitigating non-radiative recombination losses in inorganic perovskite solar cells (PSCs). However, the distinct chemical environments at the bottom (hole-transport layer) and top (electron-transport layer) interfaces demand passivation agents with tailored functionalities—a principle that remains largely underexplored. Herein, we systematically employed two organic ammonium iodide salts, phenylethylammonium iodide (PEAI) and 2-thiophenemethylammonium iodide (ThMI), to separately modulate the bottom NiOx/CsPbI2Br and top CsPbI2Br/PCBM interfaces of inverted PSCs with a configuration of ITO/NiOx/CsPbI2Br/PCBM/BCP/Ag. We reveal different interfacial modulation effects: bottom-interface modification by both PEAI and ThMI dramatically improves the fill factor (FF), with PEAI delivering a more pronounced enhancement due to improved interfacial contact and reduced series resistance. However, top-interface passivation effectively boosts the open-circuit voltage (Voc), where ThMI exhibits superior voltage elevation capability over PEAI by neutralizing undercoordinated Pb2+ defects via its thiophene moiety. Capitalizing on this complementary selectivity, we construct an asymmetric dual-interface passivation architecture with PEAI at the bottom and ThMI at the top (ITO/NiOx/PEAI/CsPbI2Br/ThMI/PCBM/BCP/Ag), which synergistically enhances both FF and Voc. Consequently, the optimized PEAI/ThMI device achieves a champion power conversion efficiency (PCE) of 15.44%, with a Voc of 1.15 V, a Jsc of 16.34 mA/cm2, and an FF of 82.15%, significantly outperforming the control device (11.79%). This work establishes a rational design paradigm for interface-specific passivation in inverted inorganic PSCs, highlighting the importance of molecular functionality in addressing distinct interfacial recombination pathways.