Raman Mishra

Raman Mishra


Research Focus & Metrics

Academic Career Length

1Year (2026-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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30 October 2026 in Ceramics
Verified
Journal Article
Open access
PDF file
SASabita Acharya
Sabita Acharya
SSSujoy Saha
Sujoy Saha
RMRaman Mishra
Raman Mishra
RBRao Bidthanapally
Rao Bidthanapally
SSSumayya Begum Sumayya
Sumayya Begum Sumayya
Gopalan SrinivasanGopalan Srinivasan
Gopalan Srinivasan
Ferromagnetic–ferroelectric bilayers capable of strong zero-bias magnetoelectric (ME) coupling are critical for device miniaturization. Here, we report a self-biased ME response achieved in a bilayer structure consisting of lead zirconate titanate (PZT) and a dual-phase ferromagnetic composite. The composite consisted of hard barium hexaferrite (BaFe12O19) (BaM), which provides a high built-in magnetocrystalline anisotropy field, and soft nickel zinc spinel ferrite (Ni0.8 Zn0.2 Fe2O4) (NZFO) to ensure high magnetostriction compliance. Samples of (100 − x) wt.% BaM − x wt.% NZFO (BNZx) were synthesized via conventional solid-state sintering, with phase purity confirmed by X-ray diffraction. Magnetic characterization revealed substantial in-plane anisotropy fields (HA) ranging from 4.8 kOe to 8.3 kOe and a high saturation magnetostriction λ11 = −25 ppm. The ME voltage coefficient (MEVC) of the bilayers increased with higher spinel content, peaking at x = 90. Under zero external DC bias field, the BNZ90-PZT bilayer showed a low-frequency (=100 Hz) MEVC of 114 mV/cm Oe and a resonant (10.6 kHz) MEVC of 3.6 V/cm Oe. This strong self-biased coupling is driven by the BaM-provided internal magnetic flux, eliminating the need for external biasing elements and offering a practical framework for compact, bias-free sensors and energy harvesters.

26 August 2026 in Preprints.org
Verified
Preprint
Open access
PDF file
SASabita Acharya
Sabita Acharya
SSSujoy Saha
Sujoy Saha
RMRaman Mishra
Raman Mishra
RBRao Bidthanapally
Rao Bidthanapally
SSSumayya Begum Sumayya
Sumayya Begum Sumayya
Gopalan SrinivasanGopalan Srinivasan
Gopalan Srinivasan
Ferromagnetic-ferroelectric composites are of interest for studies of magneto-electric (ME) coupling between the two phases, which is mediated by mechanical strain arising from magnetostriction and the piezoelectric effect. A strong ME response in such composites typically requires an external DC bias magnetic field to compensate for weak zero-bias piezomagnetic deformation in the ferromagnetic phase. This reliance on an external field remains a key barrier to device miniaturization. Here we report strong, self-biased ME coupling achieved in a bilayer structure consisting of lead zirconate titanate (PZT) and a dual-phase ferromagnetic composite. The composite pairs hard barium hexaferrite BaFe12O19 (BaM), with its high magneto-crystalline anisotropy field, with soft nickel-zinc spinel ferrite Ni0.8 Zn0.2 O4 (NZFO), with its high magnetostriction. Samples consisting of (100-x) wt.% BaM- x wt.% NZFO (BNZx) were prepared via conventional solid-state sintering, and x-ray diffraction confirmed phase purity. Magnetic characterization revealed an in-plane anisotropy field (HA) ranging from 4.8 kOe to 8.3 kOe, which decreased systematically with increasing spinel content, alongside a high saturation magnetostriction of -25 ppm. The ME coupling strength of the BNZx-PZT bilayers was evaluated via the ME voltage coefficient (MEVC) across both low-frequency and electromechanical resonance regimes. The MEVC increased markedly with higher x-values, peaking at x=90. Under zero external DC bias, the bilayer showed a low-frequency (100 Hz) MEVC of 114 mV/cm Oe and a remarkably high MEVC of 3.6 V/cm Oe at resonance (10.6 kHz). The corresponding MEVC values under an external bias were 161 mV/cm Oe and 6 V/cm Oe. This pronounced self-biased behavior, driven by the internal field of the hard BaM phase, eliminates the need for external biasing elements and provides a practical framework for compact magnetic sensors, imaging arrays, and energy harvesters.