This study presents the design, fabrication, and electrical characterization of 4H-SiC PIN diodes employed to provide a high electric field able to induce Stark effect in ⁷ Be atoms implanted in the space charge region. Indeed, a variation in the half-life of the ⁷ Be radioactive decay is expected to be achieved by applying an electric field of the order of 10 ⁶ V/cm, which can be produced by reverse-biasing 4H-SiC diodes close to the breakdown voltage. A set of diodes of area ranging between 2.12×10 ^-3 cm ² and 9.88×10 ³ cm ² was designed and fabricated to reach breakdown voltages up to 1000 V. When tested under reverse current limitation set equal to 300 nA, over 50% out of 24 devices could withstand reverse bias exceeding 800 V. This work reports on the characteristics of one diode of 9.88×10 ³ cm ² area, implanted with ⁷ Be and subject to continuous reverse-bias at 750 V for 107 days. Electrical characterization conducted before, during, and after long-term polarization highlighted an increase in the reverse current generation due to implantation-related defects, which however does not affect the breakdown voltage. These considerations lead to the conclusion that the electric field acting on the implanted ⁷Be remains stable over time, confirming the suitability of 4H-SiC diodes for both induction and measurement of ⁷ Be lifetime variations.

This work explores the possibility of using 4H-SiC PIN diodes to provide a high electric field able to induce the Stark effect in ⁷Be atoms implanted in the diode space charge region, modifying the ⁷Be radioactive decay time. A set of PIN diodes of area ranging between 2.12 × 10⁻³ cm² and 9.88 × 10⁻³ cm² was designed and fabricated to reach breakdown voltages up to 1000 V. Be ions were implanted in the epitaxial layer, and then the devices were reverse biased at about 75% of the theoretical breakdown voltage for durations exceeding 100 days, long enough for a precise measurement of the ⁷Be radioactive decay time. Electrical characterization in the pristine state, after Be ion implantation, and after long reverse bias allowed us to verify the suitability of 4H-SiC PIN diodes by assessing both the agreement between simulated and measured performance and the stability of the electric field. Be ion implantation-related defects induced both an increase in the reverse current generation and a decrease in the junction capacitance, though not affecting the breakdown voltage. Comparison with test devices implanted with the stable isotope ⁹Be indicates that any defects introduced by the ⁷Be radioactive decay are below the detection limit of the employed characterization techniques and have a negligible impact on the reverse-blocking characteristics of the diodes. Device simulations allowed us to conclude that the electric field remains close to its theoretical value throughout the experiment duration, confirming the suitability of 4H-SiC diodes for both induction and measurement of ⁷Be lifetime variations.