Katsushi Fujii

Dr. Katsushi Fujii

RIKEN Center for Advanced Photonics, Wako, Japan
orcid

Research Focus & Metrics

Academic Career Length

37Years (1990-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 June 2018 in Energy & Environmental Science
Verified
Journal Article
Closed access
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SAShane Ardo
Shane Ardo
DRDavid Fernandez Rivas
David Fernandez Rivas
MMMiguel A. Modestino
Miguel A. Modestino
VGVerena Schulze Greiving
Verena Schulze Greiving
FAFatwa Abdi
Fatwa Abdi
PWPieter Westerik
Pieter Westerik
Several application fields can benefit from solar-hydrogen technologies via specific short-term and long-term pathways.

4 December 2014 in The Journal of Physical Chemistry C
Verified
Journal Article
Closed access
HZHeng Zhong
Heng Zhong
KFKatsushi Fujii
Katsushi Fujii
YNYoshiaki Nakano
Yoshiaki Nakano
FJFangming Jin
Fangming Jin

16 September 2015 in Applied Physics Express
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Journal Article
Closed access
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ANAkihiro Nakamura
Akihiro Nakamura
YOYasuyuki Ota
Yasuyuki Ota
KKKayo Koike
Kayo Koike
YHYoshihide Hidaka
Yoshihide Hidaka
Kensuke NishiokaKensuke Nishioka
Kensuke Nishioka
KFKatsushi Fujii
Katsushi Fujii

1 April 2005 in Japanese Journal of Applied Physics
Verified
Journal Article
Closed access
KFKatsushi Fujii
Katsushi Fujii
TKTakeshi Karasawa
Takeshi Karasawa
KOKazuhiro Ohkawa
Kazuhiro Ohkawa
Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode in an electrolyte. The application of extra bias to a working electrode was required to obtain a sufficient volume of generated gas. The reactions at the GaN photoelectrode were both GaN decomposition and water oxidization, simultaneously.

14 January 2008 in IEEE Photonics Technology Letters
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Journal Article
Closed access
JHJun-Seok Ha
Jun-Seok Ha
SLS. W. Lee
S. W. Lee
HLHyun-Jae Lee
Hyun-Jae Lee
HLHyo-Jong Lee
Hyo-Jong Lee
SLS. H. Lee
S. H. Lee
TYT. Yao
T. Yao
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.

1 November 2013 in International Journal of Hydrogen Energy
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Journal Article
Closed access
KFKatsushi Fujii
Katsushi Fujii
SNShinichiro Nakamura
Shinichiro Nakamura
MSMasakazu Sugiyama
Masakazu Sugiyama
KWKentaroh Watanabe
Kentaroh Watanabe
BBBehgol Bagheri
Behgol Bagheri
YNYoshiaki Nakano
Yoshiaki Nakano