According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al _x Ga_{1 – x} N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al _x Ga_{1 – x} N surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al_0.99Ga_0.01N epilayer.

Total internal reflection (TIR) loss is a critical bottleneck limiting light extraction in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs), primarily due to the large refractive-index contrast at the light-emitting interface. Here, pyramid-shaped dielectric metasurfaces are designed and fabricated at the sapphire/air interface of flip-chip AlGaN-based DUV LEDs using a scalable nanoimprinting process. The metasurface functions as a light outcoupling layer that modifies the interfacial momentum-matching condition and redistributes photon propagation directions. Experimental results and theoretical simulations show that metasurfaces with different feature sizes enhance light extraction through distinct mechanisms. The subwavelength pyramid nanoarray perturbs the local optical field and provides additional in-plane momentum components, facilitating the coupling of high-angle photons into radiative channels, whereas the larger pyramid void structure mainly promotes photon extraction through geometrical redirection, tilted output interfaces, and dry-etching-induced rough surface scattering. As a result, an average light output power (LOP) enhancement of over 8% is achieved for AlGaN-based DUV LEDs emitting at approximately 275 nm. This work demonstrates a low-cost, scalable, and effective strategy for enhancing the LEE of DUV LEDs, with promising potential for high-efficiency ultraviolet optoelectronic application.