Quantum information processing (QIP) with solid state spin qubits strongly depends on the efficient initialisation of the qubit’s desired charge state. While the negatively charged tin-vacancy (SnV⁻) centre in diamond has emerged as an excellent platform for realising QIP protocols due to long spin coherence times at liquid helium temperature and lifetime limited optical transitions, its usefulness is severely limited by termination of the fluorescence under resonant excitation. Here, we unveil the underlying charge cycle, potentially applicable to all group IV-vacancy (G4V) centres, and exploit it to demonstrate highly efficient and rapid initialisation of the desired negative charge state of single SnV centres while preserving long term stable optical resonances. In addition to investigating the optical coherence, we all-optically probe the coherence of the ground state spins by means of coherent population trapping and find a spin dephasing time of 5(1) μs. Furthermore, we demonstrate proof-of-principle single shot spin state readout without the necessity of a magnetic field aligned to the symmetry axis of the defect.

The silicon‐vacancy center in diamond holds great promise as a qubit for quantum communication networks. However, since the optical transitions are located within the visible red spectral region, quantum frequency conversion to low‐loss telecommunication wavelengths becomes a necessity for its use in long‐range, fiber‐linked networks. This work presents a highly efficient, low‐noise quantum frequency conversion device for photons emitted by a silicon‐vacancy (SiV) center in diamond to the telecom C‐band. By using a two‐stage difference‐frequency mixing scheme, spontaneous parametric down‐conversion (SPDC) noise is circumvented and Raman noise is minimized, resulting in a very low noise rate of photons per second as well as an overall device efficiency of 35.6%. By converting single photons from SiV centers, it demonstrates the preservation of photon statistics upon conversion.

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many applications in quantum technologies. A crucial step towards harnessing the full potential of the SiC platform includes technologies to create color centers with defined localization and density, e.g., to facilitate their coupling to nano-photonic structures and to observe cooperative effects. Here, silicon vacancy centers and divacancies stand out, as no impurity atom is needed, and high-thermal budget annealing steps can be avoided. We characterize the effect of localized, femtosecond laser irradiation of SiC, investigating surface modifications and photoluminescence, including Raman spectroscopy and optical lifetime measurements. We employ commercial, high-purity, semi-insulating substrates and an industrial-grade laser system to explore broader applicability of the method. As a novel approach, we apply femtosecond laser irradiation to SiC substrates with an epitaxial graphene layer and find that the threshold for photoluminescence due to laser treatment is lowered.