Pathways for ductility: Alloys containing multiple elements can be very strong but often suffer from poor ductility. F. Wang et al. found that different mechanisms accommodated plasticity in a molybdenum-niobium-titanium multiprincipal element alloy (see the Perspective by Cairney). Instead of so-called “screw” dislocations, deformation is accommodated by multiple pathways that include “edge” dislocations and activation of crystallographic slip planes. These results offer a design paradigm for developing new high-strength alloys. Science , this issue p. 95 ; see also p. 37

Refractory multiprincipal element alloys (RMPEAs) are potential successors to incumbent high-temperature structural alloys, although efforts to improve oxidation resistance with large additions of passivating elements have led to embrittlement. RMPEAs containing group IV and V elements have a balance of properties including moderate ductility, low density, and the necessary formability. We find that oxidation of group IV-V RMPEAs induces hierarchical heterogeneities, ranging from nanoscale interstitial complexes to tertiary phases. This microstructural hierarchy considerably enhances hardness without indentation cracking, with values ranging between 12.1 and 22.6 GPa from the oxide-adjacent metal to the surface oxides, a 3.7 to 6.8× increase over the interstitial-free alloy. Our fundamental understanding of the oxygen influence on phase formation informs future alloy design to enhance oxidation resistance and obtain exceptional hardness while preserving plasticity.

The Sb concentration profile in an nBn photodetector containing an InAs/InAsSb type-II superlattice is collected and analyzed using atom probe tomography. A 3D reconstruction comprises the full composition of 31 periods. The Sb concentration profile is evaluated for the entire 31 period stack, as well as each individual period using segregation models from Muraki and Wood. Trends in the asymmetric Sb profile show a consistent non-negligible Sb concentration in the InAs layers and a lower Sb concentration in the InAsSb with respect to the target concentration.