TiN films were prepared by the Cathodic arc evaporation deposition method under different negative substrate bias. AFM image analyses show that the growth mode of biased coatings changes from 3D island to lateral when the negative bias potential is increased. Nanohardness of the thin films was measured by nanoindentation, and residual stress was determined using Grazing incidence X ray diffraction. The maximum value of residual stress is reached at −100 V substrate bias coinciding with the biggest values of adhesion and nanohardness. Nanoindentation measurement proves that the force-depth curve shifts due to residual stress. The experimental results demonstrate that nanohardness is seriously affected by the residual stress.

Size-selected TiN nanoclusters in the range of 4 to 20 nm have been produced by an ionized cluster beam, which combines a glow-discharge sputtering with an inert gas condensation technique. With this method, by controlling the experimental conditions, it was possible to produce nanoparticles with a high control in size. The size distribution of TiN nanoparticles was determined before deposition by mass spectroscopy and confirmed by atomic force microscopy. The size distribution was also analyzed using a high-resolution transmission electron micrograph. The photoluminescence [PL] spectra of TiN nanoparticles at different sizes were also experimentally investigated. We reported, for the first time, the strong visible luminescence of TiN nanoparticles on Si (111) wafer due to the reduced size. We also discussed the PL intensity as a function of the nanoparticle size distribution.