In recent years, surface-enhanced Raman scattering (SERS) of a molecule/metal–semiconductor hybrid system has attracted considerable interest and regarded as the synergetic contribution of the electromagnetic and chemical enhancements from the incorporation of noble metal into semiconductor nanomaterials. However, the underlying mechanism is still to be revealed in detail. Herein, we report an irreversible accumulated SERS behavior induced by near-infrared (NIR) light irradiating on a 4-mercaptobenzoic acid linked with silver and silver-doped titanium dioxide (4MBA/Ag/Ag-doped TiO₂) hybrid system. With increasing irradiation time, the SERS intensity of 4MBA shows an irreversible exponential increase, and the Raman signal of the Ag/Ag-doped TiO₂ substrate displays an exponential decrease. A microscopic understanding of the time-dependent SERS behavior is derived based on the microanalysis of the Ag/Ag-doped TiO₂ nanostructure and the molecular dynamics, which is attributed to three factors: (1) higher crystallinity of Ag/Ag-doped TiO₂ substrate; (2) photo-induced charge transfer; (3) charge-induced molecular reorientation.

Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga’s figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of β-Ga2O3 devices. In this work, we have reviewed the advances on contacts of β-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented.