The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.

We carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

The development of a Mach–Zehnder interferometer based on tapered optical fiber for temperature sensing applications is presented. Two tapers, 24 mm apart, were fabricated on SMF-28e+ using the fusion splicer. The optical structures were coated with a 100 nm layer of gold. The influence of the gold deposition on the temperature sensitivity of the fabricated sensors is presented. The sensor was characterized in O-, S-, C-, and L-bands in a temperature range of 0–70 °C. The highest temperature sensitivity of 72 pm/°C with R² = 0.9974 was obtained for the gold-coated sensor. During the investigation, the average transmission loss was low and did not exceed 7 dB.

This paper presents the results of research on conductive layers dedicated to flexible photovoltaic cells based on semiconductors integrated with a textile substrate. The presented work is part of a broader project aimed at producing flexible solar cells based on the CdTe semiconductor component and manufactured directly on textiles. The research focuses on the selection of textile substrates and contact materials, as well as the methods of their application. This study compares three types of fabrics (basalt, glass, and silicone fibers) and three metals (copper, molybdenum, and silver), evaluating their mechanical and electrical properties. During the experiments, flexible metallic layers with a thickness ranging from 160 to 415 nm were obtained. Preliminary experiments indicated that metallic layers deposited directly on textiles do not provide adequate conductivity, reaching the levels of several hundred Ω/sq and necessitating the introduction of intermediate layers, such as screen-printed graphite. The results show that molybdenum layers on basalt fabrics exhibit the lowest increase in resistance after dynamic bending tests. The obtained relative resistance changes in Mo layers varied from 50% to as low as 5% after a complete set of 200 bending cycles. This article also discusses current challenges and future research directions in the field of textile-integrated photovoltaics, emphasizing the importance of further technological development to improve the energy efficiency and durability of such solutions.

In this paper, the results of ab-initio simulation of crucial defects which are present in 4H-SiC are shown. Band structures and DOS for point defect and Stacking Faults (SF) are presented here.