The thermal stability of nitrogen (N) functionalities on the sidewalls of N-doped multi-walled carbon nanotubes was investigated at temperatures ranging between 1000 °C and 2000 °C. The structural stability of the doped tubes was then correlated with the electrical conductivity both at the bulk and at the individual tube levels. When as-grown tubes were thermally treated at 1000 °C, we observed a very significant decrease in the electrical resistance of the individual nanotubes, from 54 kΩ to 0.5 kΩ, which is attributed to a low N doping level (e.g. 0.78 at% N). We noted that pyridine-type N was first decomposed whereas the substitutional N was stable up to 1500 °C. For nanotubes heat treated to 1800 °C and 2000 °C, the tubes exhibited an improved degree of crystallinity which was confirmed by both the low R value (I_D/I_G) in the Raman spectra and the presence of straight graphitic planes observed in TEM images. However, N atoms were not detected in these tubes and caused an increase in their electrical resistivity and resistance. These partially annealed doped tubes with enhanced electrical conductivities could be used in the fabrication of robust and electrically conducting composites, and these results could be extrapolated to N-doped graphene and other nanocarbons.

Garnet-type Li_7-xLa₃Zr_2-xTa_xO₁₂ (LLZT) is considered a good candidate for the solid electrolyte in all-solid-state lithium batteries because of its reasonably high conductivity around 10⁻³ S cm⁻¹ at room temperature and stability against lithium (Li) metal with the lowest redox potential. In this study, we synthesized LLZT with a tantalum (Ta) content of 0.45 via a conventional solid-state reaction process and constructed a Li/LLZT/Li symmetric cell by attaching Li metal foils on the polished top and bottom surfaces of an LLZT pellet. We investigated the influence of heating temperatures and times on the interfacial charge-transfer resistance between LLZT and the Li metal electrode. In addition, the effect of the interface resistance on the stability for Li deposition and dissolution was examined using a galvanostatic cycling test. The lowest interfacial resistance of 25 Ω cm² at room temperature was obtained by heating at 175 °C (5 °C lower than the melting point of Li) for three to five hours. We confirmed that the current density at which the short circuit occurs in the Li/LLZT/Li cell via the propagation of Li dendrite into LLZT increases with decreasing interfacial charge transfer resistance.