Xavier Moreno-Vassart

Mx. Xavier Moreno-Vassart

orcid

Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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30 October 2024 in Renewable Energy
Verified
Journal Article
Open access
XMXavier Moreno-Vassart
Xavier Moreno-Vassart
FMFco. Javier Toledo Melero
Fco. Javier Toledo Melero
VCVictoria Herranz Cuadrado
Victoria Herranz Cuadrado
Vicente GalianoVicente Galiano
Vicente Galiano

23 August 2026 in Energies
Verified
Journal Article
Open access
PDF file
XMXavier Moreno-Vassart
Xavier Moreno-Vassart
MHMuhammad Jawad Ul Hassan
Muhammad Jawad Ul Hassan
SMShumaila Mushtaq
Shumaila Mushtaq
FMFco. Javier Toledo Melero
Fco. Javier Toledo Melero
Vicente GalianoVicente Galiano
Vicente Galiano
Accurate parameterization of the photovoltaic single-diode model is usually obtained from complete current–voltage (I-V) measurements. However, full I-V curve tracing is not always available in real monitoring environments, where the most accessible variables are irradiance and module temperature. This paper proposes a hybrid methodology for reconstructing the five parameters of the single-diode model from irradiance and temperature data. The method first estimates the maximum-power point and the remaining remarkable points of the I-V curve as well as the photocurrent (Iph) through regression models calibrated on measured data. These predicted points are sufficient to solve the SDM equation. A numerical approach is then used to identify the five SDM parameters while enforcing physical admissibility constraints. The method is validated using NREL outdoor datasets from three locations and several photovoltaic technologies. The results show that the maximum-power current is estimated with very high reliability, with R2 values close to unity in almost all cases. Voltage estimation is less stable and depends more strongly on technology and temperature sensor location. The reconstructed I-V curves are physically admissible for most crystalline silicon, HIT, and CdTe modules, whereas CIGS and amorphous silicon modules exhibit lower admissibility. The proposed method should therefore be understood as an environmental-data-driven reconstruction tool when complete I-V curves are unavailable, rather than as a replacement for direct full-curve fitting techniques such as TSLLS or Reduced Form.