Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 μm and 1 V bias with maximum values of 30 A/W and 2·10¹⁰ cmHz^1/2W⁻¹, respectively. Detectivity close to 10¹¹ cmHz^1/2W⁻¹ has been obtained resorting to bridge sensor readout.

Extending and controlling the spectral range of light detectors is very appealing for several sensing and imaging applications. Here we report on a normal incidence dual band photodetector operating in the visible and near infrared with a bias tunable spectral response. The device architecture is a germanium on silicon epitaxial structure made of two back-to-back connected photodiodes. The photodetectors show a broad photoresponse extending from 390nm to 1600nm with the capability to electronically select the shorter (400-1100 nm) or the longer (1000-1600 nm) portion with a relatively low applied voltage. Devices exhibit peak VIS and NIR responsivities of 0.33 and 0.63 A/W, respectively, a low optical crosstalk (<-30dB), a wide dynamic range (>120dB) and, thanks to their low voltage operation, maximum specific detectivities of 7·10¹¹cmHz^1/2/W and 2·10¹⁰cmHz^1/2/W in the VIS and NIR, respectively.

Colloidal quantum dots (CQDs) have been recently investigated as promising building blocks for low-cost and high-performance gas sensors due to their large effective surface-to-volume ratio and their suitability for versatile functionalization through surface chemistry. In this work we report on lead sulphide CQDs based sensors for room temperature NO₂ detection. The sensor response has been measured for different pollutant gases including NO₂, CH₄, CO and CO₂ and for different concentrations in the 2.8–100 ppm range. For the first time, the influence of the QDs film thickness on the sensor response has been investigated and optimized. Upon 30 ppm NO₂ release, the best room temperature gas response is about 14 Ω/Ω, with response and recovery time of 12 s and 26 min, respectively. A detection limit of about 0.15 ppb was estimated from the slope of the sensor response and its electric noise. The gas sensors exhibit high sensitivity to NO₂, remarkable selectivity, repeatability and full recovery after exposure.

Sensitive, accurate, and reliable detection of explosives has become one of the major needs for international security and environmental protection. Colloidal quantum dots, because of their unique chemical, optical, and electrical properties, as well as easy synthesis route and functionalization, have demonstrated high potential to meet the requirements for the development of suitable sensors, boosting the research in the field of explosive detection. Here, we critically review the most relevant research works, highlighting three different mechanisms for explosive detection based on colloidal quantum dots, namely photoluminescence, electrochemical, and chemoresistive sensing. We provide a comprehensive overview and an extensive discussion and comparison in terms of the most relevant sensor parameters. We highlight advantages, limitations, and challenges of quantum dot-based explosive sensors and outline future research directions for the advancement of knowledge in this surging research field.

PbS quantum dot narrowband photoconductors employed for the realization of a compact wavelength-meter system.

Germanium is considered the most suitable semiconductor for monolithic integration of near-infrared detectors on silicon photonic chips. Here we report on Ge-on-Si near-infrared photodetectors fabricated by thermal evaporation, demonstrating the use of phosphorus spin-on-dopant to compensate the acceptor states introduced by dislocations. The detectors exhibit 1.55 μm responsivities as high as 0.1 A/W, more than two orders of magnitude larger than in undoped devices and comparing well with state-of-the-art p-i-n photodiodes. This approach enables simple and low-cost monolithic integration of near-infrared sensors with silicon photonics.