Results of a study of betavoltaic energy converters and specifically of the devices on SiC/Si based heterostructures using the radionuclide ¹⁴C as a source of beta radiation are presented. The Si¹⁴C/Si semiconductor chip integrates in a natural way a beta electron injector and an energy converter based on a homo- or heterojunction, which increases the specific power and provides radiation safety by self-shielding through a 10–20 µm thick SiC layer, due to self-absorption effective self-containment of radiation within the integrated semiconductor structure. The achievable power density is 0.3 µW/cm³ with a silicon carbide thickness of 0.4 µm; the maximum short-circuit current density is 900 nA/cm², and efficiency is 21.31%. The results of modeling and experimental studies indicate that a silicon carbide film doped with a radioisotope on a silicon substrate features improved output characteristics of the energy converter due to the optimal distribution of non-equilibrium charges and dislocation gettering effects of the ¹⁴C atoms in the inner layer of the converter structure with a molecularly integrated injector. The importance of betavoltaics is that it synchronizes the achievements of microelectronics and energy sources for its autonomous functioning based on the conversion of energy of high specific density. This provides an option of delayed switching of software in an electronic device corresponding to the half-life period or accumulation of information in databases operating on the basis of an integrated “IC chip–power source”. This technology enables delayed activation of electronic systems via integrated supercapacitor buffering, facilitating energy-aware scheduling in applications from structural health monitoring to lifetime-guaranteed medical implants.

Nowadays, biosensor platforms based on various organic electrolytic transistors are in great demand due to their ability to specifically determine a wide range of biological analytes with extreme sensitivity. The main drawback of such platforms is their disposability at relatively high costs, preventing widespread application. In this work, we elaborate and successfully demonstrate a proof of concept for a universal approach for the fabrication of a reusable EGOFET-based aptasensor using polymer track-etched membranes as cheap disposable elements for biorecognition layers. We defined the most suitable pore size of track-etched membranes, which was enough for the penetration of viral particle and their capture near the current-carrying layer of EGOFET. The sensitivity of the fabricated EGOFET-based aptasensor to influenza A virus was comparable with disposal EGOFET-based biosensors having a biorecognition layer placed directly on the semiconducting layer. The limit of detection of the fabricated device was 8 × 10⁴ VP mL⁻¹, which was superior to those of antibody-based rapid analysis test systems (1 × 10⁶–4 × 10⁸ VP mL⁻¹) but inferior to those of the PCR method (3 × 10²–1.2 × 10³ VP mL⁻¹). The elaborated approach paves the way for the simple development of universal point-of-care tools consisting of rapid, non-invasive miniaturized sensors for the detection of a wide range of analytes, which are recognizable by aptamers.

The electrical characteristics of a dielectric material that can be used to determine the parameters of relaxation polarization arising in a dielectric and the influence on these characteristics of the steady leakage electrical conductivity are discussed. For weak relaxation processes at high electrical conductivities, the imaginary part of impedance can be used as such a characteristic. Extrema in the impedance frequency dependence are observed at any conductivity. However, the frequency dependence of the imaginary part of impedance contains two maxima whose frequency positions depend not only on the relaxation time but on other characteristics of the dielectric as well. In addition, the temperature shifts of the extrema of these curves depend not only on the activation energy of the relaxation process but on the activation energy of the electrical conductivity as well.

Синтез наночастиц серебра для получения гибридных трековых мембран и их дальнейшего использования в качестве сенсорных материалов Синтез наночастиц серебра для получения гибридных трековых мембран и их дальнейшего использования в качестве сенсорных материалов