VIRANJAY M. SRIVASTAVA

Prof. Dr. VIRANJAY M. SRIVASTAVA

University of KwaZulu Natal, Durban, KwaZulu-Natal, South Africa
orcid

Research Focus & Metrics

Academic Career Length

11Years (2016-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 October 2011 in Microelectronics Journal
Verified
Journal Article
Closed access
VSVIRANJAY M. SRIVASTAVA
VIRANJAY M. SRIVASTAVA
KYK.S. Yadav
K.S. Yadav
GSGHANSHYAM SINGH
GHANSHYAM SINGH

1 March 2011 in Microelectronics Journal
Verified
Journal Article
Closed access
VSVIRANJAY M. SRIVASTAVA
VIRANJAY M. SRIVASTAVA
KYK.S. Yadav
K.S. Yadav
GSGHANSHYAM SINGH
GHANSHYAM SINGH

29 December 2016 in International Journal of Laboratory Hematology
Verified
Journal Article
Closed access
PDF file
AAArun K Arunachalam
Arun K Arunachalam
ASA. Senthamizhselvi
A. Senthamizhselvi
SMS. Mani
S. Mani
KVK. Vinodhini
K. Vinodhini
NJN. B. Janet
N. B. Janet
PBPoonkuzhali Balasubramanian
Poonkuzhali Balasubramanian

1 January 2018 in AEU - International Journal of Electronics and Communications
Verified
Journal Article
Closed access
DSDhawan Singh
Dhawan Singh
VSVIRANJAY M. SRIVASTAVA
VIRANJAY M. SRIVASTAVA


1 April 2019 in Heliyon
Verified
Journal Article
Open access
SDShashi Kant Dargar
Shashi Kant Dargar
VSVIRANJAY M. SRIVASTAVA
VIRANJAY M. SRIVASTAVA
In this research work, Amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics, at different overlap and offset length between gate and Source-Drain (S-D) contacts. The resulted parameters have a better agreement to the device characteristics including high ION/IOFF at offset of the thin-film transistor (TFT) of order 10 11 , high channel mobility is 16.08 cm 2 /V.s in overlap, while it is less than 6 cm 2 /V.s for the offset TFTs. The superior electrical behavior of the novel double-gate TAL TFT have been incorporated. Later on, the device application in a new Active Matrix -Organic Light Emitting Diode (AMOLED) pixel circuit has been proposed.