Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm² V⁻¹ s⁻¹ at room temperature, higher than that (∼13,000 ² V⁻¹ s⁻¹) with exfoliated h-BN. By placing additional h-BN on a SiO₂/Si substrate for a MoS₂ (WSe₂) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5%–11% of the overall film. These regions expand across multiple grain boundaries of the underlying polycrystalline Ni film. The number density of sites with multilayer graphene/graphite (>2 layers) is reduced as the cooling rate decreases. These films can also be transferred to other substrates and their sizes are only limited by the sizes of the Ni film and the CVD chamber. Here, we demonstrate the formation of films as large as 1 in². These findings represent an important step towards the fabrication of large-scale high-quality graphene samples.

Light confined to a single atomic layer: The development of nanophotonic technology is reliant on the ability to confine light to spatial dimensions much less than the wavelength of the light itself. Typically, however, in metal plasmonic approaches, there is a trade-off between confinement and losses. Alcaraz Iranzo et al. fabricated heterostructures comprising monolayers of graphene and hexagonal boron nitride (hBN) and an array of metallic rods. The light was confined vertically (as propagating plasmons) between the metal and the graphene, even when the insulating hBN spacer was just a single monolayer. Such heterostructures should provide a powerful and versatile platform for nanophotonics. Science , this issue p. 291