Jinping Ao

Jinping Ao


Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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13 April 2017 in Advanced Materials Interfaces
Verified
Journal Article
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YBYuyu Bu
Yuyu Bu
JTJing Tian
Jing Tian
ZCZhiwei Chen
Zhiwei Chen
QZQiang Zhang
Qiang Zhang
WLWeibing Li
Weibing Li
JAJinping Ao
Jinping Ao

3 September 2019 in IEEE Sensors Journal
Verified
Journal Article
Closed access
XLXiaobo Li
Xiaobo Li
TPTao-Fei Pu
Tao-Fei Pu
TZTong Zhang
Tong Zhang
XLXianjie Li
Xianjie Li
LLLiuan Li
Liuan Li
JAJinping Ao
Jinping Ao

12 February 2020 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
XLXiaobo Li
Xiaobo Li
TPTao-Fei Pu
Tao-Fei Pu
XLXianjie Li
Xianjie Li
LLLiuan Li
Liuan Li
JAJinping Ao
Jinping Ao
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-μm-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (ID) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. In addition, the strong dependence of the leakage current on the temperature indicates that the linearity of ln (Ir) versus temperature can be also used for sensor applications.

3 February 2020 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
XLXiaobo Li
Xiaobo Li
TPTao-Fei Pu
Tao-Fei Pu
LLLiuan Li
Liuan Li
JAJinping Ao
Jinping Ao

14 June 2018 in Journal of Materials Chemistry A
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Journal Article
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RWRuiling Wang
Ruiling Wang
TXTian Xie
Tian Xie
TZTong Zhang
Tong Zhang
TPTaofei Pu
Taofei Pu
YBYuyu Bu
Yuyu Bu
JAJinping Ao
Jinping Ao
FTO–BiVO4–W–WO3 photoanode is fabricated in this study.

25 August 2020 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
YLYang Li
Yang Li
TPTao-Fei Pu
Tao-Fei Pu
XLXiao-Bo Li
Xiao-Bo Li
YZYi-Run Zhong
Yi-Run Zhong
LYLin-An Yang
Lin-An Yang
JAJinping Ao
Jinping Ao
This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based microwave rectifier with medium-power capacity and wide power bandwidth. A complete solution including SBD design and fabrication, model extraction, circuit optimization, and demonstration is proposed. The finger-type anode and critical thickness epitaxial layer techniques are adopted to reduce the GaN SBD resistance to 1.9 Ω (0.011 m · cm 2 ) and achieve nearly constant junction capacitance over a wide range of voltages (17-25V). Revised equivalent models including the effects of large pads, critical thickness epitaxial layer, and finger-type layout are proposed to describe the new features of the SBD. A 2.45-GHz microwave rectifier based on the GaN SBD is designed and measured, having a maximum power and an efficiency of 1.91 W and 78.5%, respectively. The high-efficiency power range (≥70% and ≥75%) is significantly extended to 14 and 10.8 dB. Finally, a wireless clinical examination prototype constructed by a rectifier, antennas, biomedical sensors, and a signal processer is proposed for demonstration. The resulting wireless electrocardiogram shown in computer is clear and stable.