This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. The results of the study confirm that doping silicon with ytterbium impurities leads to a decrease in the concentration of optically active oxygen by 30-40%, depending on the concentration of the introduced impurities. It was also found that an increase in the number of defects leads to a broadening of the amorphous zone. It is assumed that similar dependencies exist for the Si-Yb system; however, to the best of our knowledge, similar results have not been reported previously. It is noted that the relative intensity of the three Raman bands in Si-Yb systems in the LTIOS (The light and temperature induced ordered state) state changes, and the relative intensity of Si-Si decreases. This indicates that pendant bonds are mainly formed by the breaking of Si-Si bonds. It was also observed that the light intensity causing this condition is far from that required for laser or solid phase crystallization. Using the Raman spectroscopy method, a structural transformation was discovered, expressed in a densely packed array of nanocrystals with a size of less than 11 lattice parameters. Small clusters were under strong internal stress (up to 3 GPa), which probably prevents the cluster size from increasing beyond the critical value for irreversible crystallization. У даній роботі наведено результати дослідження стану атомів ітербію в кремнії, проведені методами інфрачервоної спектроскопії (ІЧ) та спектроскопії комбінаційного розсіювання (РС). Зразки кремнію, леговані домішками ітербію, аналізували за допомогою спектрометрів FSM-2201 та SENTERRA II Bruker. Проведено реєстрацію та ідентифікацію компонентів як кристалічної, так і аморфної фаз у зразках. Результати дослідження підтверджують, що легування кремнію домішками ітербію призводить до зниження концентрації оптично активного кисню N_O^opt на 30-40 % залежно від концентрації введених домішок. Також встановлено, що збільшення кількості дефектів призводить до розширення аморфної зони. Припускається, що аналогічні залежності існують для системи Si-Yb; однак, наскільки нам відомо, подібні результати раніше не повідомлялися. Відзначено, що відносна інтенсивність трьох раманівських смуг у системах Si-Yb у стані LTIOS (The light and temperature inducted ordered state) змінюється, а відносна інтенсивність Si-Si зменшується. Це вказує на те, що підвішені зв’язки в основному утворюються шляхом розриву зв’язків Si-Si. Було також помічено, що інтенсивність світла, яка викликає цей стан, далека від необхідної для лазерної або твердофазної кристалізації. За допомогою методу раманівської спектроскопії було виявлено структурне перетворення, виражене в щільно упакованому масиві нанокристалів з розміром менше 11 параметрів решітки. Невеликі кластери перебували під сильною внутрішньою напругою (до 3 ГПа), що, ймовірно, запобігає збільшенню розміру кластера понад критичне значення для необоротної кристалізації.

In this work, lutetium-doped silicon samples were studied using the Raman scattering method. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. There is some violation in the spectra of Raman scattering of light samples of silicon doped with lutetium in comparison with the original sample. It was found that the intensity of Raman scattering of doped samples is 2-3 times higher than the scattering from silicon. The comparison is carried out for the intensities associated with the intensities of the single-phonon line of the silicon substrate. This effect of the Raman spectra in the range 930 cm^‑1 – 1030 cm^–1 appearing in this range is similar to the data reduction for multiphonon propagation on silicon. For the obtained images (n-Si and p-Si), the bands in the atomic range of combinatorial scattering have a mixed broad and oval background in the range from 623 cm^-1 to 1400 cm^-1. This background can change the shape of the observed bands.

This article discusses the electrical properties of silicon doped with rare earth elements (REE). Atoms of rare earth elements (REE) diffused onto the surface of the silicon substrate. To measure the electrical parameters, samples of n-Si, n-Si, n-Si and n-Si were prepared and their electrical properties were determined using the Hall effect, four-probe and thermal probe methods. The studies were carried out in the temperature range 77÷300 K. The samples were ohmically contacted using a mixture of 1% Sb + 99% Au for measurement on the HMS500 instrument. The specific resistance of the samples in layers, the concentration of charge carriers, and the mobility of the samples were also studied by the magnetoresistance method. The electrical parameters of the samples were measured on an Ecopia Hall effect measuring system (HMS5000).

Each crystal structure has its own phonon modes, which appear in the Raman spectrum of Raman scattering. In the case of silicon, phonon modes associated with the diamond structure of silicon can be detected. In a Raman spectrum, the position of the lines, their intensity, and the width of the lines are usually measured. Raman spectroscopy is a powerful tool for studying crystalline materials at the molecular level, and its application in the study of semiconductors and nanomaterials provides important information about their structure and properties. In this study, the spectra of two types of silicon were analyzed: n-Si and p-Si, as well as their doped analogues n-Si and p-Si. The obtained Raman imaging results demonstrated spatially varying nanocrystallinity and microcrystallinity of the samples. The n-Si and p-Si spectra indicate the appearance of a Raman band at 525 cm-1 with a shift of -5 cm-1 and +5 cm-1, respectively, relative to the position of the silicon substrate peak, indicating the presence of tensile strain in the materials. The absence of other impurity peaks indicates the high purity of the n-Si and p-Si samples. The holmium doped Si material exhibits additional peaks in the Raman spectra, which is attributed to the presence of vacancies and defects in the newly formed Si-Ho compositions. The results of the analysis of the spectra indicate the influence of doping silicon with holmium on its structure and properties, forming new bonds and defects.

The characteristics of silicon MIS structures with ytterbium impurity are studied using non-stationary capacitance spectroscopy of deep levels. It is established that the presence of ytterbium atoms in the bulk of the silicon substrate leads to a shift in the capacitance-voltage characteristics towards positive bias voltages and a decrease in the density Nss of the surface states of the MIS structures. It is shown that this effect depends on the concentration of ytterbium atoms in the silicon substrate of the studied structures. In MIS structures based on Si, one deep level with an ionization energy Ec-0.32 eV is detected.

In this work, the structural and optical characteristics of silicon (n-Si) samples and its compositions with dysprosium (n-Si-Dy) were analyzed using Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy methods. Characteristic peaks in the FTIR spectra such as 640 cm-1 (Si-H mode) and 1615 cm-1 (perpendicular stretching mode) were identified, indicating the structural features of the material. The appearance of additional peaks in the n-Si-Dy spectra at 516.71 cm-1 and 805 cm-1 indicates the influence of dysprosium on the structure and defectiveness of the material. Examination of the frequency range (1950–2250 cm-1) further confirms local vibration modes associated with defects and interactions with dysprosium. Peaks associated with Dy-Dy stretching, as well as interaction with silicon, were found at 2110 cm-1 and 2124 cm-1. Analysis of Raman spectra indicates the formation of silicon nanocrystals during annealing, which is confirmed by XRD results. The results obtained provide important insight into the effect of dysprosium on the structure and properties of silicon materials, which could potentially find application in optoelectronics and materials science.