The generally accepted notions about the formation mechanisms for germanium islands with nanometer-scale sizes in a Ge-on-Si system are reviewed on the basis of analysis of recent publications. The...
Raman spectroscopy is used to monitor the composition and strains of GexSi1− x alloy films with 0.17 ≤ x≤ 1.0. The composition and strains in the films were also determined from the X-ray...
16 February 2012 in Semiconductor Science and Technology