This paper reports the effect of Nickel (Ni) on indium sulfide (In₂S₃) powder. This work presents a systematic study of the physical and dielectric properties of In_2-xS₃Ni_x powders with 0, 2, 4, and 6 at.% of nickel. Doped and undoped samples were investigated by X-ray powder diffraction (XRD), energy dispersive X-ray spectroscopy, thermal gravimetric analysis, Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and impedance spectroscopy. XRD patterns revealed that each In_2-xS₃Ni_x composition was crystalline, which was also confirmed by the FTIR results. The presence of Ni in the samples was confirmed by energy dispersive spectroscopy (EDS). The Raman studies show different peaks related to the In₂S₃ phase and do not reveal any secondary phases of In–Ni and Ni–S. The SEM images of the undoped and Ni-doped In₂S₃ samples indicated a correlation between dopant content and the surface roughness and porosity of the samples. The impedance analysis indicated semiconductor behavior present in all samples, as well as a decrease in resistance with increasing Ni content. This work opens up the possibility of tailoring the properties and integrating Ni-doped In₂S₃ nanocomposites as thin film layers in future solar cells.

A novel route of a single flash thermal evaporation technique has been used for deposition of Cu(In,Ga)Se₂. This route allows the deposition of stoichiometric CIGS layers direct from powder elements without selenization or any treatment. Structure, optical properties and surface morphology of the deposited films at various substrate temperatures have been investigated using X-ray diffraction (XRD) analysis, Raman spectroscopy, photospectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy. The structure and the optical properties of deposited films depend on the substrate temperatures which play crucial rule on the stoichiometry of the film by changing mainly the content of selenium. Increasing the substrate temperature improved the crystallinity of the films and the best stoichiometric film has been found at 220°C, the grain size increased from 146 to 286 Å, Whereas, the band gap reduced to 1.37 eV.

This paper focuses on the preparation of CuIn_xGa_1-xSe₂ (CIGS) by a dual thermal evaporation method only without post-salinization treatment. The effect of substrate temperature on the deposition of stoichiometric layers has been explored. Fabricated CuIn_xGa_1-xSe₂ layers were described by energy-dispersive X-ray (EDX), diffraction of X-ray, Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), Ultraviolet-Visible-Near IR Spectroscopy and the four-point probing technique. CIGS layers of chalcopyrite structures were fabricated successfully with a bandgap of 1.35 eV. The stoichiometry, the grain size and roughness of layers are affected dramatically by the substrate temperature due to re-evaporation of the selenium content during deposition at high temperature. Electrical measurements explain the relationship between electrical conductivity and the value of metal/Se.