An extensive range of metals can be dissolved and re-deposited in liquid solvents using electrochemistry. We harness this concept for additive manufacturing, demonstrating the focused electrohydrodynamic ejection of metal ions dissolved from sacrificial anodes and their subsequent reduction to elemental metals on the substrate. This technique, termed electrohydrodynamic redox printing (EHD-RP), enables the direct, ink-free fabrication of polycrystalline multi-metal 3D structures without the need for post-print processing. On-the-fly switching and mixing of two metals printed from a single multichannel nozzle facilitates a chemical feature size of <400 nm with a spatial resolution of 250 nm at printing speeds of up to 10 voxels per second. As shown, the additive control of the chemical architecture of materials provided by EHD-RP unlocks the synthesis of 3D bi-metal structures with programmed local properties and opens new avenues for the direct fabrication of chemically architected materials and devices.

The term “high-entropy alloys (HEAs)” first appeared about 10 years ago defining alloys composed of n=5–13 principal elements with concentrations of approximately 100/n at.% each. Since then many equiatomic (or near equiatomic) single- and multi-phase multicomponent alloys were developed, which are reported for a combination of tunable properties: high hardness, strength and ductility, oxidation and wear resistance, magnetism, etc. In our paper, we focus on probably single-phase HEAs (solid solutions) out of all HEAs studied so far, discuss ways of their prediction, mechanical properties. In contrast to classical multielement/multiphase alloys, only single-phase multielement alloys (solid solutions) represent the basic concept underlying HEAs as mixing-entropy stabilized homogenous materials. The literature overview is complemented by own studies demonstrating that the alloys CrFeCoNi, CrFeCoNiAl_0.3 and PdFeCoNi homogenized at 1300 and 1100°C, respectively, for 1 week are not single-phase HEAs, but a coherent mixture of two solid solutions.

As the backbone material of the information age, silicon is extensively used as a functional semiconductor and structural material in microelectronics and microsystems. At ambient temperature, the brittleness of Si limits its mechanical application in devices. Here, we demonstrate that Si processed by modern lithography procedures exhibits an ultrahigh elastic strain limit, near ideal strength (shear strength ~4 GPa) and plastic deformation at the micron-scale, one order of magnitude larger than samples made using focused ion beams, due to superior surface quality. This extended elastic regime enables enhanced functional properties by allowing higher elastic strains to modify the band structure. Further, the micron-scale plasticity of Si allows the investigation of the intrinsic size effects and dislocation behavior in diamond-structured materials. This reveals a transition in deformation mechanisms from full to partial dislocations upon increasing specimen size at ambient temperature. This study demonstrates a surface engineering pathway for fabrication of more robust Si-based structures.