Optoelectronic synaptic transistors are advantageous in in-memory light sensing for artificial neural networks. Herein, optoelectronic synaptic junction field-effect transistors (JFETs) based on a Ga2O3/MoS2 heterojunction are fabricated. The devices exhibit robust electrical performances, including a high on/off ratio of 108, a low subthreshold swing of 69 mV dec−1, and a high output current of 3.4 μA μm−1. An inverter and a NAND gate are constructed based on the dual-gated configuration, with the inverter showing a high voltage gain of 28 and the near-ideal noise margin of 90.4%. Additionally, the devices demonstrate outstanding optoelectronic performances benefiting from the strong light–matter interactions of MoS2. Typical synaptic plasticities, including short-term plasticity, long-term plasticity, and spiking-rate-dependent plasticity, are simulated by applying the light pulses. Furthermore, metaplastic excitatory postsynaptic current, metaplastic facilitation of long-term potentiation and transition from potentiation to depression are also readily demonstrated. The artificial neural network, in which neurons are interconnected through our proposed optoelectronic synaptic transistors, achieves a high accuracy of 89.8% in recognizing handwritten digits. This work provides insight into the design of an optoelectronic synapse based on JFETs.

With the rapid advancements in autonomous driving, pure vision-based solutions have garnered significant attention. However, existing vision sensors are limited by their specific spectral operating ranges and the complexity of processing hybrid optical/electrical signals. In this study, we present a fully circuit-emulated vision system that employs a vision fusion solution for autonomous driving, integrating image sensing, fusion, edge extraction, and decision-making functionalities. This system utilizes vision sensors featuring an Al2O3/two-dimensional Ruddlesden-Popper perovskite (2D PVK) heterostructural dielectric and MoS2/black phosphorus (BP)/MoS2 heterostructural channel, which exhibits persistent nonvolatility and fully light-tunable positive and negative photoresponses when exposed to 1064 nm and 532 nm light, respectively. Notably, when combined with edge extraction circuit design, our vision system achieves all-day visual perception with a 99.0% recognition accuracy for driving scenario information. The integration of the fully circuit-emulated vision system with the vision fusion solution enables a more comprehensive and accurate representation of the driving environment.

This paper proposes an oxygen plasma-assisted surface oxidation technique and demonstrates that thermal annealing in an oxygen atmosphere can effectively accelerate the formation of GaON, thereby improving the threshold voltage and gate breakdown voltage of p-GaN HEMT. The effects of annealing temperature in an oxygen environment after plasma treatment on Ga-O bond strength and p-GaN surface leakage characteristics are systematically investigated. The evolution of the valence band maximum during oxidation was systematically analyzed. Experimental results reveal that the oxidized GaN exhibits a valence band offset of 1.4 ± 0.8 eV compared to initial GaN, which effectively impedes carrier transport in p-GaN and suppresses leakage currents. By optimizing the oxidation process, a 5-nm-thick gate oxide layer was formed on the p-GaN surface within a short duration. Consequently, the p-GaN HEMT demonstrated significant performance enhancements: the threshold voltage increased from 2.1 to 4.4 V, the gate breakdown voltage improved from 9 to 24.1 V, and the operational gate voltage range expanded from 6 to 12 V. These findings validate the efficacy of the oxygen plasma and post-annealing assisted surface oxidation technique, highlighting its potential for advancing high-performance GaN power devices.

Wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors are key materials for high-power electronics, radio-frequency electronics, and ultraviolet optoelectronics. However, heterogeneous integration remains challenging because conventional heteroepitaxy is constrained by lattice mismatch and differences in thermal expansion coefficients, while interface states and non-ideal metal–semiconductor contacts can degrade carrier transport and device performance. Two-dimensional (2D) materials offer an important alternative approach to heterogeneous integration. Their dangling-bond-free surfaces and van der Waals interactions relax lattice-matching requirements and facilitate membrane release, while their tunable electronic properties enable control over band alignment and interfacial carrier transport. This review examines the integration of 2D materials with WBG and UWBG semiconductors, focusing on epitaxial growth, interface physics, optoelectronic devices, and scalable integration. Representative 2D material-assisted epitaxial modes include remote, pinhole, and van der Waals epitaxy. Mixed-dimensional heterostructures are discussed in terms of their interfacial electronic properties, contact engineering, passivation strategies, and thermal transport. Photodetection represents an important optoelectronic application of these heterostructures. Taken together, these advances highlight the growing importance of 2D materials in WBG and UWBG integration and point to broader opportunities in future electronics.